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20112025
most citedFormation and annealing of dislocation loops induced by nitrogen implantation of ZnO

54 citations

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cond-mat.mtrl-sci2016★ 11 cited

Peak separation method for sub-lattice strain analysis at atomic resolution: Application to InAs/GaSb superlattice

Honggyu Kim, Yifei Meng, Jean-Luc Rouviére +1

We report on a direct measurement of cation and anion sub-lattice strain in an InAs/GaSb type-II strained layer superlattice (T2SLs) using atomic resolution Z-contrast imaging and…

cond-mat.mtrl-sci2011★ 54 cited

Formation and annealing of dislocation loops induced by nitrogen implantation of ZnO

Guillaume Perillat-Merceroz, Patrice Gergaud, Pascal Marotel +3

Although zinc oxide is a promising material for the fabrication of short wavelength optoelectronic devices, p-type doping is a step that remains challenging for the realization of…

cond-mat.mtrl-sci2011★ 30 cited

Wafer-scale selective area growth of GaN hexagonal prismatic nanostructures on c-sapphire substrate

Xiao Jun Chen, Jun-Seo Hwang, Guillaume Perillat-Merceroz +5

Selective area growth of GaN nanostructures has been performed on full 2" c-sapphire substrates using Si3N4 mask patterned by nanoimprint lithography (array of 400 nm diameter circ…