activity
20112013
most citedIntrinsic degradation mechanism of nearly lattice-matched InAlN layers grown on GaN substrates

60 citations · 313 across the 8 of their papers we have counts for

collaborators

8 papers

cond-mat.mtrl-sci2013★ 57 cited

Compared growth mechanisms of Zn-polar ZnO nanowires on O-polar ZnO and on sapphire

Guillaume Perillat-Merceroz, Robin Thierry, Pierre-Henri Jouneau +2

Controlling the growth of zinc oxide nanowires is necessary to optimize the performances of nanowire-based devices such as photovoltaic solar cells, nano-generators, or light-emitt…

cond-mat.mtrl-sci2013★ 60 cited

Intrinsic degradation mechanism of nearly lattice-matched InAlN layers grown on GaN substrates

Guillaume Perillat-Merceroz, Gatien Cosendey, Jean-François Carlin +2

Thanks to its high refractive index contrast, band gap and polarization mismatch compared to GaN, In0.17Al0.83N layers lattice-matched to GaN are an attractive solution for applica…

cond-mat.mtrl-sci2013★ 40 cited

Core-shell multi-quantum wells in ZnO / ZnMgO nanowires with high optical efficiency at room temperature

Robin Thierry, Guillaume Perillat-Merceroz, Pierre-Henri Jouneau +2

Nanowire-based light-emitting devices require multi-quantum well heterostructures with high room temperature optical efficiencies. We demonstrate that such efficiencies can be atta…

cond-mat.mtrl-sci2012★ 23 cited

Strain relaxation by dislocation glide in ZnO/ZnMgO core-shell nanowires

Guillaume Perillat-Merceroz, Robin Thierry, Pierre-Henri Jouneau +2

Plastic relaxation of the misfit stress in core-shell semi-conducting nanowires can lead to structural defects, detrimental to applications. Core-shell Zn{0.7}Mg{0.3}O/ZnO quantum…

cond-mat.mtrl-sci2012★ 12 cited

Structural recovery of ion implanted ZnO nanowires

Guillaume Perillat-Merceroz, Fabrice Donatini, Robin Thierry +3

Ion implantation is an interesting method to dope semiconducting materials such as zinc oxide provided that the implantation-induced defects can be subsequently removed. Nitrogen i…

cond-mat.mtrl-sci2011★ 54 cited

Formation and annealing of dislocation loops induced by nitrogen implantation of ZnO

Guillaume Perillat-Merceroz, Patrice Gergaud, Pascal Marotel +3

Although zinc oxide is a promising material for the fabrication of short wavelength optoelectronic devices, p-type doping is a step that remains challenging for the realization of…