5 citations
- Sandia National Laboratories CaliforniaUS8 papers
- University of New MexicoUS6 papers
- Ames Research CenterUS3 papers
- Center for Integrated NanotechnologiesUS3 papers
- Lawrence Livermore National LaboratoryUS3 papers
- New Mexico Institute of Mining and TechnologyUS3 papers
- The Ohio State UniversityUS3 papers
- University of Illinois Urbana-ChampaignUS3 papers
- University of MichiganUS3 papers
- Western UniversityCA3 papers
- Arizona State UniversityUS2 papers
- Oak Ridge National LaboratoryUS2 papers
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physics.app-ph2026
Extremely Low Thermal Resistance Architectures for AlxGaN1-x Semiconductor Devices
Kidus Guye, Davide Orlandini, Seungheon Shin +4
Next-generation high-power radio-frequency (RF) devices increasingly demand transistors that operate efficiently with high gain at high frequencies. High-aluminum-content ultra-wid…
physics.app-ph2026
Comparison of time-resolved photoluminescence and deep-level transient spectroscopy defect evaluations in an InAs nBn detector subjected to in-situ and ex-situ 63 MeV proton irradiation
Rigo A. Carrasco, Christopher P. Hains, Nathan Gajowski +9
Deep-level transient spectroscopy and temperature-dependent time-resolved photoluminescence experiments are performed on identical InAs nBn photodetector structures as a function o…
physics.app-ph2025
Optical characterization of deep level defects in n-type AlInGaP for development of solid-state photomultiplier analogs
Andrew M. Armstrong, Evan M. Anderson, Lisa N. Caravello +6
Characterizing intrinsic defects is an important step in evaluating materials for new optoelectronic device applications. For photomultipliers, suppressing dark currents is critica…