5 papers
Flat-Band Generation in InAs/GaSb Quantum Wells through Vertically Engineered Heterostructures
Zachery A. Enderson, Jiyuan Fang, Wei-Chen Wang +8
Quantum materials constitute a novel category of substances wherein quantum effects and electron-electron (e-e) interactions give rise to unforeseen phenomena on a macroscopic scal…
Comparison of time-resolved photoluminescence and deep-level transient spectroscopy defect evaluations in an InAs nBn detector subjected to in-situ and ex-situ 63 MeV proton irradiation
Rigo A. Carrasco, Christopher P. Hains, Nathan Gajowski +9
Deep-level transient spectroscopy and temperature-dependent time-resolved photoluminescence experiments are performed on identical InAs nBn photodetector structures as a function o…
Buried Dirac points in quantum spin Hall insulators: Implications for Majorana Kramers pair-based quantum computing
Joseph J. Cuozzo, Wenlong Yu, Xiaoyan Shi +5
For heterostructures formed by a quantum spin Hall insulator (QSHI) placed in proximity to a superconductor (SC), no external magnetic field is necessary to drive the system into a…
Optical characterization of deep level defects in n-type AlInGaP for development of solid-state photomultiplier analogs
Andrew M. Armstrong, Evan M. Anderson, Lisa N. Caravello +6
Characterizing intrinsic defects is an important step in evaluating materials for new optoelectronic device applications. For photomultipliers, suppressing dark currents is critica…
Lithography defined semiconductor moires with anomalous in-gap quantum Hall states
Wei Pan, D. Bruce Burckel, Catalin D. Spataru +16
Quantum materials and phenomena have attracted great interest for their potential applications in next-generation microelectronics and quantum-information technologies. In one espe…