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papers

Publications (3)

physics.app-ph2023

Accumulation and removal of Si impurities on $I^^{2} - G a_{2} O_{3}$ arising from ambient air exposure

J. P. McCandless, C. A. Gorsak, V. Protasenko +5

Here we report that the source of Si impurities commonly observed on (010) $I^^{2} - G a_{2} O_{3}$ is from exposure of the surface to air. Moreover, we find that a 15 minute HF (49%) treatmen…

cond-mat.stat-mech2006

Photon Counting Statistics For Blinking CdSe-ZnS Quantum Dots: A Levy Walk Process

G. Margolin, V. Protasenko, M. Kuno +1

This paper has been withdrawn by the authors due to a copyright conflict with the Journal of Physical Chemistry, to which it has been submitted.

cond-mat.mtrl-sci2023

Growth of $I^\pm - G a_{2} O_{3}$ on $A l_{2} O_{3}$ by conventional molecular-beam epitaxy and metal-oxide-catalyzed epitaxy

J. P. McCandless, D. Rowe, N. Pieczulewski +8

We report the growth of $I^\pm - G a_{2} O_{3}$ on $m$ -plane $A l_{2} O_{3}$ by conventional plasma-assisted molecular-beam epitaxy (MBE) and In-mediated metal-oxide-catalyzed epitaxy (MOCATAXY). W…

Publications (3)

Accumulation and removal of Si impurities on I^2−Ga2​O3​ arising from ambient air exposure

Photon Counting Statistics For Blinking CdSe-ZnS Quantum Dots: A Levy Walk Process

Growth of I^±−Ga2​O3​ on Al2​O3​ by conventional molecular-beam epitaxy and metal-oxide-catalyzed epitaxy

Accumulation and removal of Si impurities on $I^^{2} - G a_{2} O_{3}$ arising from ambient air exposure

Growth of $I^\pm - G a_{2} O_{3}$ on $A l_{2} O_{3}$ by conventional molecular-beam epitaxy and metal-oxide-catalyzed epitaxy