Publications (28)
Large zero-bias peaks in InSb-Al hybrid semiconductor-superconductor nanowire devices
Hao Zhang, Michiel W. A. de Moor, Jouri D. S. Bommer +19
We report electron transport studies on InSb-Al hybrid semiconductor-superconductor nanowire devices. Tunnelling spectroscopy is used to measure the evolution of subgap states whil…
Mid-Infrared Detectors and Imagers Integrating All-Group IV Nanowires
Lu Luo, Mahmoud RM Atalla, Simone Assali +3
Cost-effective mid-wave infrared (MWIR) optoelectronic devices are of utmost importance to a plethora of applications such as night vision, thermal sensing, autonomous vehicles, fr…
Quantized Majorana conductance
Hao Zhang, Chun-Xiao Liu, Sasa Gazibegovic +19
Majorana zero-modes hold great promise for topological quantum computing. Tunnelling spectroscopy in electrical transport is the primary tool to identify the presence of Majorana z…
Atomic fluctuations lifting the energy degeneracy in Si/SiGe quantum dots
Brian Paquelet Wuetz, Merritt P. Losert, Sebastian Koelling +16
Electron spins in Si/SiGe quantum wells suffer from nearly degenerate conduction band valleys, which compete with the spin degree of freedom in the formation of qubits. Despite att…
Epitaxy of Advanced Nanowire Quantum Devices
Sasa Gazibegovic, Diana Car, Hao Zhang +20
Semiconductor nanowires provide an ideal platform for various low-dimensional quantum devices. In particular, topological phases of matter hosting non-Abelian quasi-particles can e…
Extended-SWIR High-Speed All-GeSn PIN Photodetectors on Silicon
Mahmoud R. M. Atalla, Cedric Lemieux-Leduc, Simone Assali +3
There is an increasing need for silicon-compatible high bandwidth extended-short wave infrared (e-SWIR) photodetectors (PDs) to implement cost-effective and scalable optoelectronic…
Three-dimensional atom-by-atom mapping of nanoscale precipitates in single Te inclusions in Cd0.9Zn0.1Te crystal
Eloïse Rahier, Sebastian Koelling, Guillaume Nadal +3
The complexity and richness of phenomena governing alloy crystal growth can be unraveled by examining the three-dimensional atomic-level distribution of elements and impurities inc…
Selective-area chemical beam epitaxy of in-plane InAs one-dimensional channels grown on InP(001), InP(111)B, and InP(110) surfaces
Joon Sue Lee, Sukgeun Choi, Mihir Pendharkar +15
We report on the selective-area chemical beam epitaxial growth of InAs in-plane, one-dimensional (1-D) channels using patterned SiO-coated InP(001), InP(111)B, and InP(110) s…
Micrometer-thick, atomically random Si0.06Ge0.90Sn0.04 for silicon-integrated infrared optoelectronics
Simone Assali, Anis Attiaoui, Sebastian Koelling +6
A true monolithic infrared photonics platform is within reach if strain and bandgap energy can be independently engineered in SiGeSn semiconductors. Herein, we investigate the stru…
Hard superconducting gap in InSb nanowires
Ãnder Gül, Hao Zhang, Folkert K. de Vries +14
Topological superconductivity is a state of matter that can host Majorana modes, the building blocks of a topological quantum computer. Many experimental platforms predicted to sho…
Extended-SWIR Photodetection in All-Group IV Core/Shell Nanowires
Lu Luo, Simone Assali, Mahmoud R. M. Atalla +6
Group IV Ge1-xSnx semiconductors hold the premise of enabling broadband silicon-integrated infrared optoelectronics due to their tunable bandgap energy and directness. Herein, we e…
Mid-infrared top-gated Ge/GeSn nanowire phototransistors
Lu Luo, Mahmoud RM Atalla, Simone Assali +2
Achieving high crystalline quality GeSn semiconductors at Sn content exceeding 10\% is quintessential to implementing the long sought-after silicon-compatible mid-inf…
Growth of PbTe nanowires by Molecular Beam Epitaxy
Sander G. Schellingerhout, Eline J. de Jong, Maksim Gomanko +8
Advances in quantum technology may come from the discovery of new materials systems that improve the performance or allow for new functionality in electronic devices. Lead tellurid…
Kinetic Control of Morphology and Composition in Ge/GeSn Core/Shell Nanowires
Simone Assali, Roberto Bergamaschini, Emilio Scalise +8
The growth of Sn-rich group-IV semiconductors at the nanoscale provides new paths for understanding the fundamental properties of metastable GeSn alloys. Here, we demonstrate the e…
Probing embedded topological modes in bulk-like GeTe-SbTe heterostructures
Hisao Nakamura, Johannes Hofmann, Nobuki Inoue +5
The interface between topological and normal insulators hosts metallic states that appear due to the change in band topology. While these topological states at a surface, i.e., a t…
In-plane selective area InSb-Al nanowire quantum networks
Roy L. M. Op het Veld, Di Xu, Vanessa Schaller +19
Strong spin-orbit semiconductor nanowires coupled to a superconductor are predicted to host Majorana zero modes. Exchange (braiding) operations of Majorana modes form the logical g…
Mid-infrared group-IV nanowire laser
Youngmin Kim, Simone Assali, Junyu Ge +10
Semiconductor nanowires have shown great potential for enabling ultra-compact lasers for integrated photonics platforms. Despite the impressive progress in developing nanowire lase…
Te-doped selective-area grown InAs nanowires for superconducting hybrid devices
Pujitha Perla, Anton Faustmann, Sebastian Koelling +11
Semiconductor nanowires have emerged as versatile components in superconducting hybrid devices for Majorana physics and quantum computing. The transport properties of nanowires can…
Reduced Dark Current in Cd0.9Zn0.1Te Detector Arrays by Aluminium Oxide Passivation
Sudarshan Singh, Luc Montpetit, Eloïse Rahier +3
Contrary to the prevailing view that processing cadmium zinc telluride (CZT) semiconductors above 150 °C leads to irreversible device degradation, here we show that Al2O3 passivat…
Transfer-printed multiple GeSn membrane mid-infrared photodetectors
Cédric Lemieux-Leduc, Mahmoud R. M. Atalla, Simone Assali +8
Due to their narrow band gap and compatibility with silicon processing, germanium-tin (GeSn) alloys are a versatile platform for scalable integrated mid-infrared photon…
Spontaneous Transition from Conformal to Two-Dimensional Growth in Ge/GeSn Core/Shell Nanowires
Simone Assali, Sebastian Koelling, Milenka Andelic +3
GeSn semiconductors are group-IV isovalent alloys that offer remarkable tunability of optoelectronic properties across the entire infrared spectrum, while remaining fully compatibl…
Ballistic superconductivity in semiconductor nanowires
Hao Zhang, Ãnder Gül, Sonia Conesa-Boj +19
Semiconductor nanowires have opened new research avenues in quantum transport owing to their confined geometry and electrostatic tunability. They have offered an exceptional testbe…
Recrystallization and Interdiffusion Processes in Laser-Annealed Strain-Relaxed Metastable GeSn0
Salim Abdi, Simone Assali, Mahmoud R. M. Atalla +3
The prospect of GeSn semiconductors for silicon-integrated infrared optoelectronics brings new challenges related to the metastability of this class of materials. As a matter of fa…
Dark current in monolithic extended-SWIR GeSn PIN photodetectors
Mahmoud R. M. Atalla, Simone Assali, Sebastian Koelling +2
The monolithic integration of extended short-wave infrared (e-SWIR) photodetectors (PDs) on silicon is highly sought-after to implement manufacturable, cost-effective sensing and i…
Epitaxy of strained, nuclear-spin free Ge quantum wells from solid source materials
Maximilian Oezkent, Chen-Hsun Lu, Lucas Becker +13
Germanium quantum well heterostructures have rapidly emerged as a leading platform for solid-state quantum information processing; however, material quality limits scalability, and…
500-period epitaxial Ge/Si0.18Ge0.82 multi-quantum wells on silicon
Simone Assali, Sebastian Koelling, Zeinab Abboud +3
Ge/SiGe multi-quantum well heterostructures are highly sought-after for silicon-integrated optoelectronic devices operating in the broad range of the electromagnetic spectrum cover…
Continuous-wave GeSn light emitting diodes on silicon with m room-temperature emission
Mahmoud R. M. Atalla, Simone Assali, Gérard Daligou +4
Silicon-compatible short- and mid-wave infrared emitters are highly sought-after for on-chip monolithic integration of electronic and photonic circuits to serve a myriad of applica…
Electronic Structure and Epitaxy of CdTe Shells on InSb Nanowires
Ghada Badawy, Bomin Zhang, Tomáš Rauch +10
Indium antimonide (InSb) nanowires are used as building blocks for quantum devices because of their unique properties, i.e., strong spin-orbit interaction and large Landé g-factor…