Publications (37)
28nm Fully-Depleted SOI Technology: Cryogenic Control Electronics for Quantum Computing
H. Bohuslavskyi, S. Barraud, M. Cassé +8
This paper reports the first cryogenic characterization of 28nm Fully-Depleted-SOI CMOS technology. A comprehensive study of digital/analog performances and body-biasing from room…
Fast gate-based readout of silicon quantum dots using Josephson parametric amplification
S. Schaal, I. Ahmed, J. A. Haigh +12
Spins in silicon quantum devices are promising candidates for large-scale quantum computing. Gate-based sensing of spin qubits offers compact and scalable readout with high fidelit…
A single hole spin with enhanced coherence in natural silicon
N. Piot, B. Brun, V. Schmitt +14
Semiconductor spin qubits based on spin-orbit states are responsive to electric field excitation allowing for practical, fast and potentially scalable qubit control. Spin-electric…
Gate reflectometry for probing charge and spin states in linear Si MOS split-gate arrays
L. Hutin, B. Bertrand, E. Chanrion +20
We fabricated linear arrangements of multiple splitgate devices along an SOI mesa, thus forming a 2xN array of individually controllable Si quantum dots (QDs) with nearest neighbor…
Control of single spin in CMOS devices and its application for quantum bits
R. Maurand, D. Kotekar-Patil, A. Corna +9
We show how to measure and manipulate a single spin in a CMOS device fabricated in a pre-industrial 300 mm CMOS foundry. The device can be used as a spin quantum bit working at ver…
Electrical control of g-factors in a few-hole silicon nanowire MOSFET
B. Voisin, R. Maurand, S. Barraud +5
Hole spins in silicon represent a promising yet barely explored direction for solid-state quantum computation, possibly combining long spin coherence, resulting from a reduced hype…
Dispersively detected Pauli Spin-Blockade in a Silicon Nanowire Field-Effect Transistor
A. C. Betz, R. Wacquez, M. Vinet +5
We report the dispersive readout of the spin state of a double quantum dot formed at the corner states of a silicon nanowire field-effect transistor. Two face-to-face top-gate elec…
Cryogenic characterization of 28nm FD-SOI ring oscillators with energy efficiency optimization
H. Bohuslavskyi, S. Barraud, V. Barral +14
Extensive electrical characterization of ring oscillators (ROs) made in high- metal gate 28nm Fully-Depleted Silicon-on- Insulator (FD-SOI) technology is presented for a set of…
Valley blockade and multielectron spin-valley Kondo effect in silicon
A. Crippa, M. L. V. Tagliaferri, D. Rotta +6
We report on the valley blockade and the multielectron Kondo effect generated by an impurity atom in a silicon nano field effect device. According to the spin-valley nature of tunn…
Si CMOS Platform for Quantum Information Processing
L. Hutin, R. Maurand, D. Kotekar-Patil +7
We report the first quantum bit device implemented on a foundry-compatible Si CMOS platform. The device, fabricated using SOI NanoWire MOSFET technology, is in essence a compact tw…
Valley population of donor states in highly strained silicon
B. Voisin, K. S. H. Ng, J. Salfi +13
Strain is extensively used to controllably tailor the electronic properties of materials. In the context of indirect band-gap semiconductors such as silicon, strain lifts the valle…
Reconfigurable quadruple quantum dots in a silicon nanowire transistor
A. C. Betz, M. L. V. Tagliaferri, M. Vinet +4
We present a novel reconfigurable metal-oxide-semiconductor multi-gate transistor that can host a quadruple quantum dot in silicon. The device consist of an industrial quadruple-ga…
Cryogenic Subthreshold Swing Saturation in FD-SOI MOSFETs described with Band Broadening
H. Bohuslavskyi, A. G. M. Jansen, S. Barraud +13
In the standard MOSFET description of the drain current as a function of applied gate voltage , the subthreshold swing has a funda…
Individual charge traps in silicon nanowires: Measurements of location, spin and occupation number by Coulomb blockade spectroscopy
M. Hofheinz, X. Jehl, M. Sanquer +3
We study anomalies in the Coulomb blockade spectrum of a quantum dot formed in a silicon nanowire. These anomalies are attributed to electrostatic interaction with charge traps in…
All-Electrical Control of a Hybrid Electron Spin/Valley Quantum Bit in SOI CMOS Technology
L. Hutin, L. Bourdet, B. Bertrand +14
We successfully demonstrated experimentally the electrical-field-mediated control of the spin of electrons confined in an SOI Quantum Dot (QD) device fabricated with a standard CMO…
RF simulation platform of qubit control using FDSOI technology for quantum computing
H. Jacquinot, R. Maurand, G. Troncoso Fernandez Bada +6
In this paper, we report on simulations of an Electron Spin Resonance (ESR) RF control line for semiconductor electron spin qubits. The simulation includes both the ESR line charac…
Towards scalable silicon quantum computing
M. Vinet, L. Hutin, B. Bertrand +20
We report the efforts and challenges dedicated towards building a scalable quantum computer based on Si spin qubits. We review the advantages of relying on devices fabricated in a…
Drain current modulation in a nanoscale field-effect-transistor channel by single dopant implantation
B. C. Johnson, G. C. Tettamanzi, A. D. C. Alves +9
We demonstrate single dopant implantation into the channel of a silicon nanoscale metal-oxide-semiconductor field-effect-transistor. This is achieved by monitoring the drain curren…
Spin readout of a CMOS quantum dot by gate reflectometry and spin-dependent tunnelling
V. N. Ciriano-Tejel, M. A. Fogarty, S. Schaal +8
Silicon spin qubits are promising candidates for realising large scale quantum processors, benefitting from a magnetically quiet host material and the prospects of leveraging the m…
Coupling and coherent electrical control of two dopants in a silicon nanowire
E. Dupont-Ferrier, B. Roche, B. Voisin +5
Electric control of individual atoms or molecules in a solid-state system offers a promising way to bring quantum mechanical functionalities into electronics. This idea has recentl…
Spatially resolved spectroscopy on a superconducting proximity structure
M. Vinet, C. Chapelier, F. Lefloch
We investigated the local density of states (LDOS) of a normal metal (N) in good electrical contact with a superconductor (S) as a function of the distance to the NS interface.…
Scaling silicon-based quantum computing using CMOS technology: State-of-the-art, Challenges and Perspectives
M. F. Gonzalez-Zalba, S. de Franceschi, E. Charbon +3
Complementary metal-oxide semiconductor (CMOS) technology has radically reshaped the world by taking humanity to the digital age. Cramming more transistors into the same physical s…
A new FDSOI spin qubit platform with 40nm effective control pitch
T. Bédécarrats, B. Cardoso Paz, B. Martinez Diaz +19
Operating Si quantum dot (QD) arrays requires homogeneous and ultra-dense structures with aggressive gate pitch. Such a density is necessary to separately control the QDs chemical…
A two-atom electron pump
B. Roche, R. -P. Riwar, B. Voisin +6
The fabrication of single atom transistors paved the way for electronics based on single dopants. Recently the spectrum of a single dopant was measured electrically by coupling two…
Size scaling of the addition spectra in silicon quantum dots
M. Bohm, M. Hofheinz, X. Jehl +6
We investigate small artificial quantum dots obtained by geometrically controlled resistive confinement in low mobility silicon-on-insulator nanowires. Addition spectra were record…
Gate-reflectometry dispersive readout and coherent control of a spin qubit in silicon
A. Crippa, R. Ezzouch, A. Aprá +10
Silicon spin qubits have emerged as a promising path to large-scale quantum processors. In this prospect, the development of scalable qubit readout schemes involving a minimal devi…
A quantum dot-based frequency multiplier
G. A. Oakes, L. Peri, L. Cochrane +8
Silicon offers the enticing opportunity to integrate hybrid quantum-classical computing systems on a single platform. For qubit control and readout, high-frequency signals are requ…
A simple and controlled single electron transistor based on doping modulation in silicon nanowires
M. Hofheinz, X. Jehl, M. Sanquer +3
A simple and highly reproducible single electron transistor (SET) has been fabricated using gated silicon nanowires. The structure is a metal-oxide-semiconductor field-effect trans…
SOI technology for quantum information processing
S. De Franceschi, L. Hutin, R. Maurand +9
We present recent progress towards the implementation of a scalable quantum processor based on fully-depleted silicon-on-insulator (FDSOI) technology. In particular, we discuss an…
Fast high-fidelity single-shot readout of spins in silicon using a single-electron box
G. A. Oakes, V. N. Ciriano-Tejel, D. Wise +18
Three key metrics for readout systems in quantum processors are measurement speed, fidelity and footprint. Fast high-fidelity readout enables mid-circuit measurements, a necessary…
Radio-frequency dispersive detection of donor atoms in a field-effect transistor
J. Verduijn, M. Vinet, S. Rogge
Radio-frequency dispersive read-out can provide a useful probe to nano-scale structures such as nano-wire devices, especially when the implementation of charge sensing is not strai…
Single donor ionization energies in a nanoscale CMOS channel
M. Pierre, R. Wacquez, X. Jehl +3
One consequence of the continued downwards scaling of transistors is the reliance on only a few discrete atoms to dope the channel, and random fluctuations of the number of these d…
Background charges and quantum effects in quantum dots transport spectroscopy
M. Pierre, M. Hofheinz, X. Jehl +4
We extend a simple model of a charge trap coupled to a single-electron box to energy ranges and parameters such that it gives new insights and predictions readily observable in man…
Design and operation of CMOS-compatible electron pumps fabricated with optical lithography
P. Clapera, J. Klochan, R. Lavieville +8
We report CMOS-compatible quantized current sources (electron pumps) fabricated with nanowires (NWs) on 300 mm SOI wafers. Unlike other Al, GaAs or Si based metallic or semiconduct…
A CMOS silicon spin qubit
R. Maurand, X. Jehl, D. Kotekar Patil +8
Silicon, the main constituent of microprocessor chips, is emerging as a promising material for the realization of future quantum processors. Leveraging its well-established complem…
Resonant tunneling spectroscopy of valley eigenstates on a hybrid double quantum dot
T. Kobayashi, J. van der Heijden, M. G. House +6
We report electronic transport measurements through a silicon hybrid double quantum dot consisting of a donor and a quantum dot. Transport spectra show resonant tunneling peaks inv…
A hybrid metal/semiconductor electron pump for quantum metrology
X. Jehl, B. Voisin, T. Charron +8
Electron pumps capable of delivering a current higher than 100pA with sufficient accuracy are likely to become the direct mise en pratique of the possible new quantum definition of…