Publications (11)
Structure and electronic properties of epitaxial graphene grown on SiC
M. Sprinkle, J. Hicks, A. Tejeda +11
We review progress in developing epitaxial graphene as a material for carbon electronics. In particular, improvements in epitaxial graphene growth, interface control and the unders…
Resonant Excitation of Graphene K-Phonon and Intra-Landau-Level Excitons in Magneto-Optical Spectroscopy
M. Orlita, Liang Z. Tan, M. Potemski +5
Precise infrared magnetotransmission experiments have been performed in magnetic fields up to 32 T on a series of multilayer epitaxial graphene samples. We observe changes in the s…
Bilayer graphene inclusions in rotational-stacked multilayer epitaxial graphene
M. Orlita, C. Faugeras, J. Borysiuk +8
Additional component in multi-layer epitaxial graphene grown on the C-terminated surface of SiC, which exhibits the characteristic electronic properties of a AB-stacked graphene bi…
The structural properties of the multi-layer graphene/4H-SiC(000-1) system as determined by Surface X-ray Diffraction
J. Hass, R. Feng, J. E. Millan-Otoya +6
We present a structural analysis of the multi-layer graphene-4HSiC(000-1}) system using Surface X-Ray Reflectivity. We show for the first time that graphene films grown on the C-te…
Effect of a magnetic field on the two-phonon Raman scattering in graphene
C. Faugeras, P. Kossacki, D. M. Basko +5
We have studied, both experimentally and theoretically, the change of the so-called 2D band of the Raman scattering spectrum of graphene (the two-phonon peak near 2700 cm-1) in an…
Symmetry breaking in commensurate graphene rotational stacking; a comparison of theory and experiment
J. Hicks, M. Sprinkle, K. Shepperd +8
Graphene stacked in a Bernal configuration (60 degrees relative rotations between sheets) differs electronically from isolated graphene due to the broken symmetry introduced by int…