Publications (50)
28nm Fully-Depleted SOI Technology: Cryogenic Control Electronics for Quantum Computing
H. Bohuslavskyi, S. Barraud, M. Cassé +8
This paper reports the first cryogenic characterization of 28nm Fully-Depleted-SOI CMOS technology. A comprehensive study of digital/analog performances and body-biasing from room…
Proximity effect in planar Superconductor/Semiconductor junction
F. Lefloch, D. Quirion, M. Sanquer
We have measured the very low temperature (down to 30 mK) subgap resistance of Titanium Nitride (Superconductor, Tc = 4.6 K)/highly doped Silicon (Semiconductor) SIN junction (the…
Thermionic charge transport in CMOS nano-transistors
A. C. Betz, S. Barraud, Q. Wilmart +4
We report on DC and microwave electrical transport measurements in silicon-on-insulator CMOS nano-transistors at low and room temperature. At low source-drain voltage, the DC curre…
Tunneling in very small GaAs MESFET
W. Poirier, D. Mailly, M. Sanquer
We study the transport through gated GaAS:Si wires of 0.5 micrometer length in the insulating regime and observe transport via elastic tunneling at very low temperature. We describ…
Andreev Reflection Enhanced Shot Noise in Mesoscopic SNS Junctions
X. Jehl, P. Payet-Burin, C. Baraduc +2
Current noise is measured with a SQUID in low impedance and transparent Nb-Al-Nb j unctions of length comparable to the phase breaking length and much longer than the thermal lengt…
Gate reflectometry for probing charge and spin states in linear Si MOS split-gate arrays
L. Hutin, B. Bertrand, E. Chanrion +20
We fabricated linear arrangements of multiple splitgate devices along an SOI mesa, thus forming a 2xN array of individually controllable Si quantum dots (QDs) with nearest neighbor…
Doubled Full Shot Noise in Quantum Coherent Superconductor - Semiconductor Junctions
F. Lefloch, C. Hoffmann, M. Sanquer +1
We performed low temperature shot noise measurements in Superconductor (TiN) - strongly disordered normal metal (heavily doped Si) weakly transparent junctions. We show that the co…
Control of single spin in CMOS devices and its application for quantum bits
R. Maurand, D. Kotekar-Patil, A. Corna +9
We show how to measure and manipulate a single spin in a CMOS device fabricated in a pre-industrial 300 mm CMOS foundry. The device can be used as a spin quantum bit working at ver…
Electrical control of g-factors in a few-hole silicon nanowire MOSFET
B. Voisin, R. Maurand, S. Barraud +5
Hole spins in silicon represent a promising yet barely explored direction for solid-state quantum computation, possibly combining long spin coherence, resulting from a reduced hype…
Shot noise measurements in NS junctions and the semiclassical theory
X. Jehl, M. Sanquer
We present a new analysis of shot noise measurements in normal metal-superconductor (NS) junctions [X. Jehl et al., Nature 405, 50 (2000)], based on a recent semiclassical theory.…
Inelastic relaxation and noise temperature in S/N/S junctions
C. Hoffmann, F. Lefloch, M. Sanquer
We studied electronic relaxation in long diffusive superconductor / normal metal / superconductor (S/N/S) junctions by means of current noise and transport measurements down to ver…
Dispersively detected Pauli Spin-Blockade in a Silicon Nanowire Field-Effect Transistor
A. C. Betz, R. Wacquez, M. Vinet +5
We report the dispersive readout of the spin state of a double quantum dot formed at the corner states of a silicon nanowire field-effect transistor. Two face-to-face top-gate elec…
Cryogenic characterization of 28nm FD-SOI ring oscillators with energy efficiency optimization
H. Bohuslavskyi, S. Barraud, V. Barral +14
Extensive electrical characterization of ring oscillators (ROs) made in high- metal gate 28nm Fully-Depleted Silicon-on- Insulator (FD-SOI) technology is presented for a set of…
Proximity effect in planar TiN-Silicon junctions
D. Quirion, F. Lefloch, M. Sanquer
We measured the low temperature subgap resistance of titanium nitride (superconductor, Tc=4.6K)/highly doped silicon (degenerated semiconductor) SIN junctions, where I stands for t…
Electron-electron interaction in doped GaAs at high magnetic field
W. Poirier, D. Mailly, M. Sanquer
We observe an inversion of the low temperature dependence for the conductivity of doped GaAs by application of a magnetic field. This inversion happens when Wct = 1, as predicted b…
Si CMOS Platform for Quantum Information Processing
L. Hutin, R. Maurand, D. Kotekar-Patil +7
We report the first quantum bit device implemented on a foundry-compatible Si CMOS platform. The device, fabricated using SOI NanoWire MOSFET technology, is in essence a compact tw…
Pseudogap in a thin film of a conventional superconductor
B. Sacepe, C. Chapelier, T. I. Baturina +3
A superconducting state is characterized by the gap in the electronic density of states which vanishes at the superconducting transition temperature Tc. It was discovered that in h…
Single-dopant resonance in a single-electron transistor
V. N. Golovach, X. Jehl, M. Houzet +4
Single dopants in semiconductor nanostructures have been studied in great details recently as they are good candidates for quantum bits, provided they are coupled to a detector. He…
Reconfigurable quadruple quantum dots in a silicon nanowire transistor
A. C. Betz, M. L. V. Tagliaferri, M. Vinet +4
We present a novel reconfigurable metal-oxide-semiconductor multi-gate transistor that can host a quadruple quantum dot in silicon. The device consist of an industrial quadruple-ga…
Cryogenic Subthreshold Swing Saturation in FD-SOI MOSFETs described with Band Broadening
H. Bohuslavskyi, A. G. M. Jansen, S. Barraud +13
In the standard MOSFET description of the drain current as a function of applied gate voltage , the subthreshold swing has a funda…
Defect detection in nano-scale transistors based on radio-frequency reflectometry
B. J. Villis, A. O. Orlov, X. Jehl +3
Radio-frequency reflectometry in silicon single-electron transistors (SETs) is presented. At low temperatures (<4 K), in addition to the expected Coulomb blockade features associat…
Design and cryogenic operation of a hybrid quantum-CMOS circuit
P. Clapera, X. Jehl, A. Corna +4
Silicon-On-Insulator nanowire transistors of very small dimensions exhibit quantum effects like Coulomb blockade or single-dopant transport at low temperature. The same process als…
Individual charge traps in silicon nanowires: Measurements of location, spin and occupation number by Coulomb blockade spectroscopy
M. Hofheinz, X. Jehl, M. Sanquer +3
We study anomalies in the Coulomb blockade spectrum of a quantum dot formed in a silicon nanowire. These anomalies are attributed to electrostatic interaction with charge traps in…
All-Electrical Control of a Hybrid Electron Spin/Valley Quantum Bit in SOI CMOS Technology
L. Hutin, L. Bourdet, B. Bertrand +14
We successfully demonstrated experimentally the electrical-field-mediated control of the spin of electrons confined in an SOI Quantum Dot (QD) device fabricated with a standard CMO…
Conductance statistics in small insulating GaAs:Si wires at low temperature. II. Experimental study
F. Ladieu, D. Mailly, M. Sanquer
We have observed reproducible conductance fluctuations at low temperature in a small GaAs:Si wire driven across the Anderson transition by the application of a gate voltage. We ana…
Towards scalable silicon quantum computing
M. Vinet, L. Hutin, B. Bertrand +20
We report the efforts and challenges dedicated towards building a scalable quantum computer based on Si spin qubits. We review the advantages of relying on devices fabricated in a…
Drain current modulation in a nanoscale field-effect-transistor channel by single dopant implantation
B. C. Johnson, G. C. Tettamanzi, A. D. C. Alves +9
We demonstrate single dopant implantation into the channel of a silicon nanoscale metal-oxide-semiconductor field-effect-transistor. This is achieved by monitoring the drain curren…
Wigner and Kondo physics in quantum point contacts revealed by scanning gate microscopy
B. Brun, F. Martins, S. Faniel +11
Quantum point contacts exhibit mysterious conductance anomalies in addition to well known conductance plateaus at multiples of 2e^2/h. These 0.7 and zero-bias anomalies have been i…
Coulomb Blockade in low mobility nanometer size Si:MOSFETs
M. Sanquer, M. Specht, L. Ghenim +2
We investigate coherent transport in Si:MOSFETs with nominal gate lengths 50 to 100nm and various widths at very low temperature. Independent of the geometry, localized states appe…
Coupling and coherent electrical control of two dopants in a silicon nanowire
E. Dupont-Ferrier, B. Roche, B. Voisin +5
Electric control of individual atoms or molecules in a solid-state system offers a promising way to bring quantum mechanical functionalities into electronics. This idea has recentl…
Mesoscopic transition in the shot noise of diffusive S/N/S junctions
C. Hoffmann, F. Lefloch, M. Sanquer +1
We experimentally investigated the current noise in diffusive Superconductor/Normal metal/Superconductor junctions with lengths between the superconducting coherence length xi_Delt…
Mesoscopic proximity effect in double barrier Superconductor/Normal Metal junctions
D. Quirion, C. Hoffmann, F. Lefloch +1
We report transport measurements down to T=60mK of SININ and SNIN structures in the diffusive limit. We fabricated Al-AlOx/Cu/AlOx/Cu (SININ) and Al/Cu/AlOx/Cu (SNIN) vertical junc…
Localization of preformed Cooper-pairs in disordered superconductors
B. Sacepe, T. Dubouchet, C. Chapelier +5
The most profound effect of disorder on electronic systems is the localization of the electrons transforming an otherwise metallic system into an insulator. If the metal is also a…
Disorder-Induced Inhomogeneities of the Superconducting State Close to the Superconductor-Insulator Transition
B. Sacepe, C. Chapelier, T. I. Baturina +3
Scanning tunneling spectroscopy at very low temperature on homogeneously disordered superconducting Titanium Nitride thin films reveals strong spatial inhomogeneities of the superc…
A two-atom electron pump
B. Roche, R. -P. Riwar, B. Voisin +6
The fabrication of single atom transistors paved the way for electronics based on single dopants. Recently the spectrum of a single dopant was measured electrically by coupling two…
Size scaling of the addition spectra in silicon quantum dots
M. Bohm, M. Hofheinz, X. Jehl +6
We investigate small artificial quantum dots obtained by geometrically controlled resistive confinement in low mobility silicon-on-insulator nanowires. Addition spectra were record…
Gate-reflectometry dispersive readout and coherent control of a spin qubit in silicon
A. Crippa, R. Ezzouch, A. Aprá +10
Silicon spin qubits have emerged as a promising path to large-scale quantum processors. In this prospect, the development of scalable qubit readout schemes involving a minimal devi…
Electron phase shift at the zero-bias anomaly of quantum point contacts
B. Brun, F. Martins, S. Faniel +11
The Kondo effect is the many-body screening of a local spin by a cloud of electrons at very low temperature. It has been proposed as an explanation of the zero-bias anomaly in quan…
A simple and controlled single electron transistor based on doping modulation in silicon nanowires
M. Hofheinz, X. Jehl, M. Sanquer +3
A simple and highly reproducible single electron transistor (SET) has been fabricated using gated silicon nanowires. The structure is a metal-oxide-semiconductor field-effect trans…
SOI technology for quantum information processing
S. De Franceschi, L. Hutin, R. Maurand +9
We present recent progress towards the implementation of a scalable quantum processor based on fully-depleted silicon-on-insulator (FDSOI) technology. In particular, we discuss an…
Discrete Charging in Polysilicon Gates of Single Electron Transistors
Dharmraj Kotekar-Patil, Stefan Jauerneck, David Wharam +4
Low temperature electron transport measurements of single electron transistors fabricated in advanced CMOS technology with polysilicon gates not only exhibit clear Coulomb blockade…
Thermoelectric Scanning Gate Interferometry on a Quantum Point Contact
B. Brun, F. Martins, S. Faniel +11
We introduce a new scanning probe technique derived from scanning gate microscopy (SGM) in order to investigate thermoelectric transport in two-dimensional semiconductor devices. T…
SQUID based resistance bridge for shot noise measurement on low impedance samples
X. Jehl, P. Payet-Burin, C. Baraduc +2
We present a resistance bridge which uses a SQUID to measure the shot noise in low impedance samples. The experimental requirements are high DC bias currents (typically 10mA) toget…
Pauli spin blockade in CMOS double quantum dot devices
D. Kotekar-Patil, A. Corna, R. Maurand +6
Silicon quantum dots are attractive candidates for the development of scalable, spin-based qubits. Pauli spin blockade in double quantum dots provides an efficient, temperature ind…
Single donor ionization energies in a nanoscale CMOS channel
M. Pierre, R. Wacquez, X. Jehl +3
One consequence of the continued downwards scaling of transistors is the reliance on only a few discrete atoms to dope the channel, and random fluctuations of the number of these d…
Background charges and quantum effects in quantum dots transport spectroscopy
M. Pierre, M. Hofheinz, X. Jehl +4
We extend a simple model of a charge trap coupled to a single-electron box to energy ranges and parameters such that it gives new insights and predictions readily observable in man…
99.992 % Si CVD-grown epilayer on 300 mm substrates for large scale integration of silicon spin qubits
V. Mazzocchi, P. G. Sennikov, A. D. Bulanov +7
Silicon-based quantum bits with electron spins in quantum dots or nuclear spins on dopants are serious contenders in the race for quantum computation. Added to process integration…
Design and operation of CMOS-compatible electron pumps fabricated with optical lithography
P. Clapera, J. Klochan, R. Lavieville +8
We report CMOS-compatible quantized current sources (electron pumps) fabricated with nanowires (NWs) on 300 mm SOI wafers. Unlike other Al, GaAs or Si based metallic or semiconduct…
A CMOS silicon spin qubit
R. Maurand, X. Jehl, D. Kotekar Patil +8
Silicon, the main constituent of microprocessor chips, is emerging as a promising material for the realization of future quantum processors. Leveraging its well-established complem…
A hybrid metal/semiconductor electron pump for quantum metrology
X. Jehl, B. Voisin, T. Charron +8
Electron pumps capable of delivering a current higher than 100pA with sufficient accuracy are likely to become the direct mise en pratique of the possible new quantum definition of…