papers

Publications (10)

quant-ph2021

Error mitigation via stabilizer measurement emulation

A. Greene, M. Kjaergaard, M. E. Schwartz +16

Dynamical decoupling (DD) is a widely-used quantum control technique that takes advantage of temporal symmetries in order to partially suppress quantum errors without the need reso…

cond-mat.mes-hall2015

Two-dimensional epitaxial superconductor-semiconductor heterostructures: A platform for topological superconducting networks

J. Shabani, M. Kjaergaard, H. J. Suominen +12

Progress in the emergent field of topological superconductivity relies on synthesis of new material combinations, combining superconductivity, low density, and spin-orbit coupling…

cond-mat.mes-hall2017

Superconducting, Insulating, and Anomalous Metallic Regimes in a Gated Two-Dimensional Semiconductor-Superconductor Array

C. G. L. Bøttcher, F. Nichele, M. Kjaergaard +4

The superconductor-insulator transition in two dimensions has been widely investigated as a paradigmatic quantum phase transition. The topic remains controversial, however, because…

cond-mat.mes-hall2018

Andreev rectifier: a nonlocal conductance signature of topological phase transitions

T. Ö. Rosdahl, A. Vuik, M. Kjaergaard +1

The proximity effect in hybrid superconductor-semiconductor structures, crucial for realizing Majorana edge modes, is complicated to control due to its dependence on many unknown m…

cond-mat.mes-hall2016

Proximity Effect Transfer from NbTi into a Semiconductor Heterostructure via Epitaxial Aluminum

A. C. C. Drachmann, H. J. Suominen, M. Kjaergaard +4

We demonstrate the transfer of the superconducting properties of NbTi---a large-gap high-critical-field superconductor---into an InAs heterostructure via a thin intermediate layer…

cond-mat.mes-hall2022

Gate-Tunable Transmon Using Selective-Area-Grown Superconductor-Semiconductor Hybrid Structures on Silicon

A. Hertel, M. Eichinger, L. O. Andersen +12

We present a gate-voltage tunable transmon qubit (gatemon) based on planar InAs nanowires that are selectively grown on a high resistivity silicon substrate using III-V buffer laye…