Publications (7)
Long-lived excitons in GaN/AlN nanowire heterostructures
M. Beeler, C. B. Lim, P. Hille +6
GaN/AlN nanowire heterostructures can display photoluminescence (PL) decay times on the order of microseconds that persist up to room temperature. Doping the GaN nanodisk insertion…
Growth of on by conventional molecular-beam epitaxy and metal-oxide-catalyzed epitaxy
J. P. McCandless, D. Rowe, N. Pieczulewski +8
We report the growth of on -plane by conventional plasma-assisted molecular-beam epitaxy (MBE) and In-mediated metal-oxide-catalyzed epitaxy (MOCATAXY). W…
Nonpolar m-plane GaN/AlGaN heterostructures with intersubband transitions in the 5 to 10 THz band
C. B. Lim, A. Ajay, C. Bougerol +6
This paper assesses intersubband transitions in the 1 to 10 THz frequency range in nonpolar m-plane GaN/AlGaN multi-quantum-wells deposited on free-standing semi-insulating GaN sub…
Screening of the quantum-confined Stark effect in AlN/GaN nanowire superlattices by Germanium doping
P. Hille, J. MüÃener, P. Becker +8
We report on electrostatic screening of polarization-induced internal electric fields in AlN/GaN nanowire heterostructures with Germanium-doped GaN nanodiscs embedded between AlN b…
Carrier Confinement in GaN/AlGaN Nanowire Heterostructures for 0 < x <= 1
F. Furtmayr, J. Teubert, P. Becker +7
The three dimensional carrier confinement in GaN nanodiscs embedded in GaN/AlGaN nanowires and its effect on their photoluminescence properties is analyzed for Al concentrations be…
Tuning of the Quantum-Confined Stark Effect in Wurtzite Group-III-Nitride Nanostructures by the Internal-Field-Guarded-Active-Region Design
S. Schlichting, G. M. O. Hönig, J. MüÃener +9
Recently, we suggested an unconventional approach [the so-called Internal-Field-Guarded-Active-Region Design (IFGARD)] for the elimination of the crystal polarization field induced…