Publications (8)
Probing exciton localization in non-polar GaN/AlN Quantum Dots by single dot optical spectroscopy
F. Rol, S. Founta, H. Mariette +6
We present an optical spectroscopy study of non-polar GaN/AlN quantum dots by time-resolved photoluminescence and by microphotoluminescence. Isolated quantum dots exhibit sharp emi…
Observation of interface carrier states in no-common-atom heterostructures ZnSe/BeTe
A. S. Gurevich, V. P. Kochereshko, J. Bleuse +3
Existence of intrinsic carrier interface states in heterostructures with no common atom at the interface (such as ZnSe/BeTe) is evidenced experimentally by ellipsometry and photolu…
Effect of doping on the intersubband absorption in Si- and Ge-doped GaN/AlN heterostructures
A. Ajay, C. B. Lim, D. A. Browne +5
In this paper, we study band-to-band and intersubband characteristics of GaN/AlN heterostructures (planar and nanowires) structurally designed to absorb in the short-wavelength inf…
Optical Study of GaAs quantum dots embedded into AlGaAs nanowires
V. N. Kats, V. P. Kochereshko, A. V. Platonov +8
We report on the photoluminescence characterization of GaAs quantum dots embedded into AlGaAs nano-wires. Time integrated and time resolved photoluminescence measurements from both…
CdSe-single-nanoparticle based active tips for near-field optical microscopy
N. Chevalier, M. J. Nasse, J . C. Woehl +4
We present a method to realize active optical tips for use in near-field optics that can operate at room temperature. A metal-coated optical tip is covered with a thin polymer laye…
Optical Determination of the Band Gap and Band Tail of Epitaxial AgZnSnSe at Low Temperature
S. Perret, Y. Curé, L. Grenet +3
We report on the precise determination of both the band gap E, and the characteristic energy of the band tail of localized defect states, for monocrystalline AgZ…