Ultra-Slow Dynamic Annealing of Neutron-induced Defects in n-type Silicon: Role of Charge Carriers

Ying Zhang, Yang Liu, Hang Zhou +3

Neutron bombardments with equivalent fluence (1$\times$10${}^{10}$ cm${}^{-2}$) and different fluxes ($2.5\times$10${}^5$ cm${}^{-2}$s${}^{-1}$ to $1\times$10${}^7$ cm${}^{-2}$s${}^{-1}$) have bee…