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cond-mat.mtrl-sci2025
Electronic structure and defect properties of Bi-doped GaN: origins of photoluminescence and optical absorption
Yujie Liu, Ishtiaque Ahmed Navid, Zetian Mi +1
Extreme lattice-mismatched III-V nitrides, such as Bi-incorporated GaN, have been realized experimentally thanks to recent advances in epitaxial growth and characterization techniq…
cond-mat.mtrl-sci2024
Selective incorporation of antimony into gallium nitride
Yujie Liu, Ishtiaque Ahmed Navid, Zetian Mi +1
Dilute concentrations of antimony (Sb) incorporation into GaN induce strong band-gap bowing and tunable room-temperature photoluminescence from the UV to the green spectral regions…