29 citations · 69 across the 6 of their papers we have counts for
6 papers
Density dependence of the excitation gaps in an undoped Si/SiGe double-quantum-well heterostructure
D. Chen, S. Cai, N. -W. Hsu +7
We report low-temperature magneto-transport measurements of an undoped Si/SiGe asymmetric double quantum well heterostructure. The density in both layers is tuned independently uti…
Single and Double Hole Quantum Dots in Strained Ge/SiGe Quantum Wells
Will J. Hardy, C. Thomas Harris, Yi-Hsin Su +6
Even as today's most prominent spin-based qubit technologies are maturing in terms of capability and sophistication, there is growing interest in exploring alternate material platf…
Weak anti-localization of two-dimensional holes in germanium beyond the diffusive regime
Chung-Tao Chou, Noah Tobias Jacobson, Jonathan Edward Moussa +5
Gate-controllable spin-orbit coupling is often one requisite for spintronic devices. For practical spin field-effect transistors, another essential requirement is ballistic spin tr…
Atomic-layer doping of SiGe heterostructures for atomic-precision donor devices
E. Bussmann, John King Gamble, J. C. Koepke +9
As a first step to porting scanning tunneling microscopy methods of atomic-precision fabrication to a strained-Si/SiGe platform, we demonstrate post-growth P atomic-layer doping of…
Effective g factor of low-density two-dimensional holes in a Ge quantum well
T. M. Lu, C. T. Harris, S. -H. Huang +3
We report measurements of the effective factor of low-density two-dimensional holes in a Ge quantum well. Using the temperature dependence of the Shubnikov-de Haas oscillations…
Density-controlled quantum Hall ferromagnetic transition in a two-dimensional hole system
T. M. Lu, L. A. Tracy, D. Laroche +5
Quantum Hall ferromagnetic transitions are typically achieved by increasing the Zeeman energy through in-situ sample rotation, while transitions in systems with pseudo-spin indices…