151 citations · 202 across the 2 of their papers we have counts for
2 papers
physics.app-ph2021★ 151 cited
Hafnia-based Double Layer Ferroelectric Tunnel Junctions as Artificial Synapses for Neuromorphic Computing
Benjamin Max, Michael Hoffmann, Halid Mulaosmanovic +2
Ferroelectric tunnel junctions (FTJ) based on hafnium zirconium oxide (Hf1-xZrxO2; HZO) are a promising candidate for future applications, such as low-power memories and neuromorph…
cond-mat.mtrl-sci2017★ 51 cited
A computational study of hafnia-based ferroelectric memories: from ab initio via physical modeling to circuit models of ferroelectric device
Milan Pešić, Christopher Künneth, Michael Hoffmann +7
The discovery of ferroelectric properties of binary oxides revitalized the interest in ferroelectrics and bridged the scaling gap between the state-of-the-art semiconductor technol…