70 citations · 154 across the 7 of their papers we have counts for
7 papers
Thermal Conductivity of Double Polymorph Ga2O3 Structures
Azat Abdullaev, Kairolla Sekerbayev, Alexander Azarov +4
Recently discovered double gamma/beta (γ/\b{eta}) polymorph Ga2O3 structures constitute a class of novel materials providing an option to modulate functional properties across inte…
Optical activity and phase transformations in γ/β Ga2O3 bilayers under annealing
Alexander Azarov, Augustinas Galeckas, Ildikó Cora +4
Gallium oxide (Ga2O3) can be crystallized in several polymorphs exhibiting different physical properties. In this work, polymorphic structures consisting of the cubic defective spi…
Self-assembling of multilayered polymorphs with ion beams
Alexander Azarov, Cristian Radu, Augustinas Galeckas +8
Polymorphism contributes to the diversity of nature, so that even materials having identical chemical compositions exhibit variations in properties because of different lattice sym…
Interplay of the disorder and strain in gallium oxide
Alexander Azarov, Vishnukanthan Venkatachalapathy, Platon Karaseov +4
Ion irradiation is a powerful tool to tune properties of semiconductors and, in particular, of gallium oxide (Ga2O3) which is a promising ultra-wide bandgap semiconductor exhibitin…
Disorder-induced ordering in gallium oxide polymorphs
Alexander Azarov, Calliope Bazioti, Vishnukanthan Venkatachalapathy +3
Polymorphs are common in nature and can be stabilized by applying external pressure in materials. The pressure/strain can also be induced by the gradually accumulated radiation dis…
GaZn-VZn acceptor complex defect in Ga-doped ZnO
Aihua Tang, Zengxia Mei, Yaonan Hou +5
Identification of complex defect has been a long-sought-after physics problem for controlling the defect population and engineering the useful properties in wide bandgap oxide semi…
Fluorine doping: A feasible solution to enhancing the conductivity of high-resistance wide bandgap Mg0.51Zn0.49O active components
Lishu Liu, Zengxia Mei, Yaonan Hou +5
N-type doping of high-resistance wide bandgap semiconductors, wurtzite high-Mg-content MgxZn1-xO for instance, has always been a fundamental application-motivated research issue. H…