Md. Redwanul Islam

collaborators

3 papers

cond-mat.mtrl-sci2025

Wafer scale reactive sputtering of highly oriented and ferroelectric Al $_{0.6}$ Sc $_{0.4}$ N from 300 mm AlSc Targets

Tom-Niklas Kreutzer, Muhammad Zubair Ghori, Md Redwanul Islam +4

This paper presents progress towards the large-scale manufacturability of piezo- and ferroelectric Al $_{1 - x}$ Sc $_{x}$ N thin films with very high Sc content. Al $_{0.6}$ Sc $_{0.4}$ N lay…

cond-mat.mtrl-sci2025

Interfacial Polarization Switching in Al0.92Sc0.08N/GaN Heterostructures Grown by Sputter Epitaxy

Niklas Wolff, Georg SchÃ¶nweger, Redwanul Md. Islam +4

The integration of ferroelectric nitride thin films such as Al1-xScxN onto GaN templates could enable enhanced functionality in novel high-power transistors and memory devices. Thi…

physics.app-ph2024

Improved Leakage Currents and Polarity Control through Oxygen Incorporation in Ferroelectric Al0.73Sc0.27N Thin Films

Md Redwanul Islam, Niklas Wolff, Georg SchÃ¶nweger +8

This article examines systematic oxygen (O)-incorporation to reduce total leakage currents in sputtered wurtzite-type ferroelectric Al0.73Sc0.27N thin films, along with its impact…

Wafer scale reactive sputtering of highly oriented and ferroelectric Al0.6​Sc0.4​N from 300 mm AlSc Targets

Interfacial Polarization Switching in Al0.92Sc0.08N/GaN Heterostructures Grown by Sputter Epitaxy

Improved Leakage Currents and Polarity Control through Oxygen Incorporation in Ferroelectric Al0.73Sc0.27N Thin Films

Wafer scale reactive sputtering of highly oriented and ferroelectric Al $_{0.6}$ Sc $_{0.4}$ N from 300 mm AlSc Targets