most citedElectrically detected magnetic resonance of carbon dangling bonds at the Si-face 4H-SiC/SiO interface

30 citations · 30 across the 1 of their papers we have counts for

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1 paper

cond-mat.mtrl-sci2017★ 30 cited

Electrically detected magnetic resonance of carbon dangling bonds at the Si-face 4H-SiC/SiO interface

Gernot Gruber, Jonathon Cottom, Robert Meszaros +5

SiC based metal-oxide-semiconductor field-effect transistors (MOSFETs) have gained a significant importance in power electronics applications. However, electrically active defects…