activity
20162023
most citedOn the origin of Blue Luminescence in Mg doped GaN

27 citations · 54 across the 10 of their papers we have counts for

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Showing cond-mat.mtrl-sciShow all

5 papers · 1 filter

cond-mat.mtrl-sci2023

In-situ real-time evolution of intrinsic stresses and microstructure during growth of cathodic arc deposited (Al,Ti)N coatings

Sanjay Nayak, Tun-Wei Hsu, Lina Rogström +8

The residual stress plays a vital role in determination of the device performance that uses thin films coating and thus the accurate determination of stress and its optimization wi…

cond-mat.mtrl-sci2019

Error Minimization in Predicting Accurate Adsorption Energies Using Machine Learning

Sanjay Nayak, Satadeep Bhattacharjee, Jung-Hae Choi +1

Finding the "ideal" catalyst is a matter of great interest in the communities of chemists and material scientists, partly because of its wide spectrum of industrial applications. I…

cond-mat.mtrl-sci2017

Vacancy defect in bulk and at (100) surface of GaN: A combined first-principles theoretical and experimental analysis

Sanjay Nayak, Mit H. Naik, Manish Jain +2

We determine atomic and electronic structure, formation energy, stability and magnetic properties of native point defects, such as Gallium (Ga) and Nitrogen (N) vacancies in bulk a…

cond-mat.mtrl-sci2017★ 27 cited

On the origin of Blue Luminescence in Mg doped GaN

Sanjay Nayak, Mukul Gupta, Umesh V. Waghmare +1

We uncover the origin of blue luminescence (BL) peak in Mg doped GaN thin film using a combination of experimental X-ray absorption near edge spectroscopy (XANES), first-principles…

cond-mat.mtrl-sci2016

GaN Nanowall Network: A new possible route to obtain efficient p-GaN and enhanced light extraction

Sanjay Kumar Nayak, Mukul Gupta, S. M. Shivaprasad

We demonstrate that GaN formed in a Nanowall Network (NwN) morphology can overcome fundamental limitations in optoelectronic devices, and enable high light extraction and effective…