activity
20042021
most citedOptical absorption and photoluminescence spectroscopy of the growth of silver nanoparticles

128 citations · 276 across the 11 of their papers we have counts for

collaborators

11 papers

cond-mat.mtrl-sci2021★ 7 cited

Correlation between anion defects and ion beam induced luminescence in Y4Zr3O12

Sruthi Mohan, Gurpreet Kaur, Sachin Srivastava +3

Potential applications of Zr/Al ODS alloys vests on the irradiation stability of the Y4Zr3O12 dispersoids. Fundamental studies to identify the type of defects are important in orde…

cond-mat.mtrl-sci2020★ 22 cited

Structural, Raman and photoluminescence studies on nanocrystalline diamond films: Effects of ammonia in feedstock

K. Ganesan, P. K. Ajikumar, S. K. Srivatava +1

Herein, we report on the improvement of structural quality and enhancement of photoluminescence (PL) emission for an optimally N doped nanocrystalline diamond (NCD) film. Pure and…

cond-mat.mtrl-sci2017★ 21 cited

VO2 microcrystals as advanced smart window material at semiconductor to metal transition

Raktima Basu, P. Magudapathy, Manas Sardar +2

Textured VO2(011) microcrystals are grown in the monoclinic, M1 phase which undergo a reversible first order semiconductor to metal transition (SMT) accompanied by a structural pha…

cond-mat.mtrl-sci2017★ 30 cited

Role of 1-D finite size Heisenberg chain in increasing metal to insulator transition temperature in hole rich VO2

Raktima Basu, Manas Sardar, Santanu Bera +2

VO2 samples are grown with different oxygen concentrations leading to different monoclinic, M1 and triclinic, T insulating phases which undergo a first order metal to insulator tra…

cond-mat.mtrl-sci2017★ 6 cited

Optical properties of AlGaN nanowires synthesized via ion beam techniques

Santanu Parida, P. Magudapathy, A. K. Sivadasan +2

AlGaN plays a vital role in hetero-structure high electron mobility transistor by employing a two-dimensional electron gas and as electron blocking layer in the multi quantum well…

cond-mat.mtrl-sci2007★ 6 cited

Nitrogen ion beam synthesis of InN in InP (100) at elevated temperature

S. Dhara, P. Magudapathy, R. Kesavamoorthy +8

InN phase is grown in crystalline InP(100) substrates by 50 keV N+ implantation at an elevated temperature of 400 deg C followed by annealing at 525 deg C in N2 ambient. Crystallog…