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cond-mat.mtrl-sci2020
Strain-induced semiconductor to metal transition in MA2Z4 bilayers
Hongxia Zhong, Wenqi Xiong, Pengfei Lv +2
Very recently, a new type of two-dimensional layered material MoSi2N4 has been fabricated, which is semiconducting with weak interlayer interaction, high strength, and excellent st…
cond-mat.mtrl-sci2018
Tunable electronic and magneto-optical properties of monolayer arsenene from GW approximation to large-scale tight-binding simulations
Jin Yu, Mikhail I. Katsnelson, Shengjun Yuan
Monolayers of group VA elements have attracted great attention with the rising of black phosphorus. Here, we derive a simple tight-binding model for monolayer grey arsenic, referre…
cond-mat.mtrl-sci2017
Hyperhoneycomb boron nitride with anisotropic mechanical, electronic and optical properties
Jin Yu, Lihua Qu, Edo van Veen +2
Boron nitride structures have excellent thermal and chemical stabilities. Based on state-of-art theoretical calculations, we propose a wide gap semiconducting BN crystal with a thr…