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cond-mat.mtrl-sci2026
940-nm VCSELs grown by molecular beam epitaxy on Ge(001)
Karim Ben Saddik, Alexandre Arnoult, Pierre Gadras +5
Vertical-cavity surface-emitting laser (VCSEL) structures emitting near 940 nm were grown by solid source molecular beam epitaxy (MBE) on Ge(001) substrates. The VCSEL MBE-growth w…
cond-mat.mtrl-sci2025
Impact of impurities on leakage current induced by High-Energy Density Pulsed Laser Annealing in Si diodes
Richard Monflier, Richard Daubriac, Mahmoud Haned +9
For semiconductor device fabrication, Pulsed Laser Annealing (PLA) offers significant advantages over conventional thermal processes. Notably, it can provide ultrafast (~ns) and hi…
cond-mat.mtrl-sci2024
Large-Scale Epitaxial Integration of Single-Crystalline BiSb Topological Insulator on GaAs (111)A
Mohamed Ali Khaled, Leonardo Cancellara, Salima Fekraoui +8
Topological insulators (TI) are promising materials for future spintronics applications and their epitaxial integration would allow the realization of new hybrid interfaces. As the…