3 papers
physics.optics2026
Electrically-pumped near-infrared VCSEL epitaxially-grown on Si
Guilhem Almuneau, Alexandre Arnoult, Karim Ben Saddik +8
The monolithic integration of compact laser sources onto silicon remains a critical bottleneck for the scalable development of silicon photonics. In particular, the direct epitaxia…
cond-mat.mtrl-sci2026
940-nm VCSELs grown by molecular beam epitaxy on Ge(001)
Karim Ben Saddik, Alexandre Arnoult, Pierre Gadras +5
Vertical-cavity surface-emitting laser (VCSEL) structures emitting near 940 nm were grown by solid source molecular beam epitaxy (MBE) on Ge(001) substrates. The VCSEL MBE-growth w…
cond-mat.mtrl-sci2025
Optical refractive index measurements of AlGaAs at high temperature for fully automated molecular beam epitaxy growth of Bragg mirrors
Pierre Gadras, Léo Bourdon, Antoine Fées +3
In-situ measurement is a key feature to better understand and precisely control the growth of complex structures, such as vertical-cavity surface-emitting lasers. In this work, we…