50 citations · 59 across the 2 of their papers we have counts for
2 papers
cond-mat.mes-hall2017★ 9 cited
Atomic and electronic structure of doped Si(111)(2root3x2root3)R30(degrees)-Sn interfaces
Seho Yi, Fangfei Ming, Ying-Tzu Huang +8
The hole doped Si(111)(2root3x2root3)R30(degrees)-Sn interface exhibits a symmetry-breaking insulator-insulator transition below 100 K that appears to be triggered by electron tunn…
cond-mat.mes-hall2017★ 50 cited
Realization of a hole-doped Mott insulator on a triangular silicon lattice
Fangfei Ming, Steve Johnston, Daniel Mulugeta +6
The physics of doped Mott insulators is at the heart of some of the most exotic physical phenomena in materials research including insulator-metal transitions, colossal magneto-res…