15 citations · 60 across the 14 of their papers we have counts for
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Strongly coupled interface electronic states and interface phonon mode at GaP/Si(001)
Gerson Mette, Kunie Ishioka, Steven Youngkin +3
Ultrafast carrier and phonon dynamics at the buried heterointerface of GaP/Si(001) are investigated by means of two-color pump-probe reflectivity measurements. The carrier-induced…
Accurate first-principle bandgap predictions in strain-engineered ternary III-V semiconductors
Badal Mondal, Marcel Kröner, Thilo Hepp +2
Tuning the bandgap in ternary III-V semiconductors via modification of the composition or the strain in the material is a major approach for the design of optoelectronic materials.…
Measuring spatially-resolved potential drops at semiconductor hetero-interfaces using 4D-STEM
Varun Shankar Chejarla, Shamail Ahmed, Jürgen Belz +3
Characterizing long-range electric fields and built-in potentials in functional materials at nano- to micrometer scales is of supreme importance for optimizing devices. E.g., the f…