15 citations · 60 across the 14 of their papers we have counts for
11 papers · 1 filter
Strongly coupled interface electronic states and interface phonon mode at GaP/Si(001)
Gerson Mette, Kunie Ishioka, Steven Youngkin +3
Ultrafast carrier and phonon dynamics at the buried heterointerface of GaP/Si(001) are investigated by means of two-color pump-probe reflectivity measurements. The carrier-induced…
Accurate first-principle bandgap predictions in strain-engineered ternary III-V semiconductors
Badal Mondal, Marcel Kröner, Thilo Hepp +2
Tuning the bandgap in ternary III-V semiconductors via modification of the composition or the strain in the material is a major approach for the design of optoelectronic materials.…
Measuring spatially-resolved potential drops at semiconductor hetero-interfaces using 4D-STEM
Varun Shankar Chejarla, Shamail Ahmed, Jürgen Belz +3
Characterizing long-range electric fields and built-in potentials in functional materials at nano- to micrometer scales is of supreme importance for optimizing devices. E.g., the f…
Octave-spanning 1 emission across the visible spectrum from single crystalline 1,3,5,7-tetrakis-(-methoxyphenyl)adamantane
Marius J. Müller, Ferdinand Ziese, Jürgen Belz +8
Sustainable efficient light emitter based solely on elements-of-hope are needed to replace current compounds based on less-abundant materials. Functionalized diamondoids are a pote…
Adamantanes as white-light emitters: Controlling arrangement and functionality by external Coulomb forces
Jürgen Belz, Johannes Haust, Marius J. Müller +10
Functionalized adamantane molecular cluster materials show highly transient nonlinear optical properties of currently unclear structural origin. Several interaction mechanisms in c…
White-light generating molecular materials: correlation between the amorphous/crystalline structure and nonlinear optical properties
Johannes Haust, Jürgen Belz, Marius Müller +11
Amorphous materials are integral part of todays technology, they commonly are performant and versatile in integration. Consequently, future applications increasingly aim to harvest…
Ab-initio calculation of band alignments for opto-electronic simulations
Jan Oliver Oelerich, Maria J. Weseloh, Kerstin Volz +1
A modified core-to-valence band maximum approach is applied to calculate band offsets of strained III/V semiconductor hetero junctions. The method is used for the analysis of (In,G…
Coherent optical and acoustic phonons generated at lattice-matched GaP/Si(001) heterointerfaces
Kunie Ishioka, Andreas Beyer, Wolfgang Stolz +4
Thin GaP films can be grown on an exact Si(001) substrate with nearly perfect lattice match. We perform all-optical pump-probe measurements to investigate the ultrafast electron-ph…
Valence band-anticrossing in GaPBi dilute bismide alloys: giant bowing of the band gap and spin-orbit splitting energy
Zoe L. Bushell, Christopher A. Broderick, Lukas Nattermann +5
Using spectroscopic ellipsometry measurements on GaPBi/GaP epitaxial layers up to % we observe a giant bowing of the direct band gap () and valence…
Ab initio calculations of the concentration dependent band gap reduction in dilute nitrides
Phil Rosenow, Lars C. Bannow, Eric W. Fischer +4
While being of persistent interest for the integration of lattice-matched laser devices with silicon circuits, the electronic structure of dilute nitride III/V-semiconductors has p…
Sub-picosecond acoustic pulses at buried GaP/Si interfaces
Kunie Ishioka, Avinash Rustagi, Andreas Beyer +5
We report on the optical generation and detection of ultrashort acoustic pulses that propagate in three-dimensional semiconductor crystals. Photoexcitaiton of lattice-matched GaP l…