274 citations · 760 across the 7 of their papers we have counts for
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Zhuocheng Zhang, Zehao Lin, Pai-Ying Liao +12
In this work, we demonstrate atomic-layer-deposited (ALD) single-channel indium oxide (In2O3) gate-all-around (GAA) nanoribbon FETs in a back-end-of-line (BEOL) compatible process.…