739 citations · 1.7k across the 8 of their papers we have counts for
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cond-mat.mes-hall2016★ 305 cited
High Performance Depletion/Enhancement-Mode beta-Ga2O3 on Insulator (GOOI) Field-effect Transistors with Record Drain Currents of 600/450 mA/mm
Hong Zhou, Mengwei Si, Sami Alghmadi +3
In this letter, we report on high performance depletion/enhancement (D/E)-mode beta-Ga2O3 on insulator (GOOI) field-effect transistors (FETs) with record high drain currents (ID) o…
cond-mat.mtrl-sci2016★ 61 cited
Performance Enhancement of Black Phosphorus Field-Effect Transistors by Chemical Doping
Yuchen Du, Lingming Yang, Hong Zhou +1
In this letter, a new approach to chemically dope black phosphorus (BP) is presented, which significantly enhances the device performance of BP field-effect transistors for an init…