The Influence of V-Defects, Leakage, and Random Alloy Fluctuations on the Carrier Transport in Red InGaN MQW LEDs

Huai-Chin Huang, Shih-Min Chen, Claude Weisbuch +2

Red InGaN-based light-emitting diodes (LEDs) exhibit lower internal quantum efficiencies (IQEs) than violet, blue, and green InGaN LEDs due to a reduction in radiative recombinatio…