activity
20172024
most citedVariability in Resistive Memories

194 citations · 446 across the 8 of their papers we have counts for

collaborators

8 papers

cond-mat.mes-hall2024★ 145 cited

Stochastic resonance in a metal-oxide memristive device

A. N. Mikhaylov, D. V. Guseinov, A. I. Belov +13

The stochastic resonance phenomenon has been studied experimentally and theoretically for a state-of-art metal-oxide memristive device based on yttria-stabilized zirconium dioxide…

physics.app-ph2024★ 194 cited

Variability in Resistive Memories

Juan B. Roldán, Enrique Miranda, David Maldonado +17

Resistive memories are outstanding electron devices that have displayed a large potential in a plethora of applications such as nonvolatile data storage, neuromorphic computing, ha…

q-bio.NC2022★ 13 cited

Spatial computing in structured spiking neural networks with a robotic embodiment

Sergey A. Lobov, Alexey N. Mikhaylov, Ekaterina S. Berdnikova +2

One of the challenges of modern neuroscience is creating a "living computer" based on neural networks grown in vitro. Such an artificial device is supposed to perform neurocomputat…

cond-mat.mtrl-sci2021★ 6 cited

Photoluminescence of ion-synthesized 9R-Si inclusions in SiO2/Si structure: effect of irradiation dose and oxide film thickness

Alena Nikolskaya, Alexey Belov, Alexey Mikhaylov +3

The study of hexagonal silicon polytypes attracts special attention due to their unique physical properties compared to the traditional cubic phase of Si. Thus, for some hexagonal…

physics.bio-ph2021★ 1 cited

Stochastic Memristive Interface between Electronic FitzHugh-Nagumo Neurons

S. Gerasimova, A. Belov, D. Korolev +6

The dynamics of memristive device in response to neuron-like signals and coupling electronic neurons via memristive device has been investigated theoretically and experimentally. T…

cond-mat.mtrl-sci2021★ 84 cited

Ion implantation in \b{eta}-Ga2O3: physics and technology

Alena Nikolskaya, Evgenia Okulich, Dmitry Korolev +12

Gallium oxide and in particular its thermodynamically stable \b{eta}-Ga2O3 phase is within the most exciting materials in research and technology nowadays due to its unique propert…

cs.ET2020★ 3 cited

Design and Simulation of Memristor-Based Artificial Neural Network for Bidirectional Adaptive Neural Interface

Sergey Shchanikov, Anton Zuev, Ilya Bordanov +7

This article proposes a general approach to the simulation and design of a multilayer perceptron (MLP) network on the basis of cross-bar arrays of metal-oxide memristive devices. T…

cs.ET2017

Towards Hardware Implementation of Double-Layer Perceptron Based on Metal-Oxide Memristive Nanostructures

A. N. Mikhaylov, O. A. Morozov, P. E. Ovchinnikov +8

Construction and training principles have been proposed and tested for an artificial neural network based on metal-oxide thin-film nanostructures possessing bipolar resistive switc…