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20172021
most citedQuantum Simulation of an Extended Fermi-Hubbard Model Using a 2D Lattice of Dopant-based Quantum Dots

78 citations · 78 across the 4 of their papers we have counts for

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cond-mat.mtrl-sci2017

Quantifying Atom-scale Dopant Movement and Electrical Activation in Si:P Monolayers

Xiqiao Wang, Joseph A. Hagmann, Pradeep Namboodiri +8

Advanced hydrogen lithography techniques and low-temperature epitaxial overgrowth enable patterning of highly phosphorus-doped silicon (Si:P) monolayers (ML) with atomic precision.…