60 citations · 224 across the 12 of their papers we have counts for
12 papers
Dynamic buckling of Si tetramers on the Si(111)-7x7
R. Zhachuk, J. Coutinho, D. Sheglov
The atomic structure of Si tetramers that form on the Si surface during homoepitaxy, is investigated by means of first principles calculations with the cur…
Crucial role of vibrational entropy in the Si(111)-77 surface structure stability
Ruslan A. Zhachuk, José Coutinho
We investigate the relative thermodynamic stability of the , , , and infinitely large structures related to the dimers-adatoms-stacking fau…
Atomic structure of the single step and dynamics of Sn adatoms on the Si(111)-\sqrt{3}\times\sqrt{3}-Sn surface
R. A. Zhachuk, D. I. Rogilo, A. S. Petrov +4
The atomic structure of well-ordered single steps on the Si(111)-\sqrt{3}\times\sqrt{3}-Sn surface and the dynamics of Sn adatoms in the vicinity of these steps was studied. The wo…
Universal building block for (1 1 0)-family silicon and germanium surfaces
R. A. Zhachuk, A. A. Shklyaev
The universal building block which is an essential part of all atomic structures on (1 1 0) silicon and germanium surfaces and their vicinals is proposed from first-principles calc…
Magnification effects in scanning tunneling microscopy: the role of surface radicals
Ruslan Zhachuk, Jose Coutinho
Scanning tunneling microscopy (STM) is a fundamental tool for determination of the surface atomic structure. However, the interpretation of high resolution microscopy images is not…
Formation of ordered arrays of Ag nanowires and nanodots on Si(5 5 7) surface
R. A. Zhachuk, S. A. Teys, A. E. Dolbak +1
The ordered arrays of Ag nanowires and nanodots have been grown in ultra-high vacuum on the Si(5 5 7) surface containing regular steps of three bilayer height. Formation of Ag nano…
Orientation and structure of triple step staircase on vicinal Si(1 1 1) surfaces
S. A. Teys, K. N. Romanyuk, R. A. Zhachuk +1
The vicinal Si(111) surface, inclined towards the [-1-12] direction, was investigated by scanning tunnelling microscopy and spot profile analysing low energy electron diffraction.…
Pentagons in the Si surface reconstruction
Ruslan Zhachuk, Sergey Teys
The microscopic structure of the high-index Si surface is investigated combining scanning tunneling microscopy with ab initio calculations. We present a structur…
Atomic and electronic structure of the Si(331)-(121) surface
Ruslan Zhachuk, José Coutinho, Krisztián Palotás
We report on the investigation of the atomic and electronic structures of a clean Si(331)-(121) surface using a first-principles approach with both plane wave and strictly…
A comment on "Different STM Images of the Superstructure on a Clean Si(133)-6x2 Surface" (JETP Letters 105 (8), 477-483 (2017))
R. Zhachuk, J. Coutinho
In the recent paper by Teys [JETP Letters 105 (8), 477-483 (2017)], an atomic model for the Si(331) reconstructed surface (hereby referred to as T-model) was proposed on the basis…
Si(111) strained layers on Ge(111): evidence for c(2x4) domains
R. Zhachuk, J. Coutinho, A. Dolbak +2
The tensile strained Si(111) layers grown on top of Ge(111) substrates are studied by combining scanning tunneling microscopy, low energy electron diffraction and first-principles…
Strain-induced structure transformations on Si(111) and Ge(111) surfaces: a combined density-functional and scannning tunnneling microscopy report
R. Zhachuk, S. Teys, J. Coutinho
Si(111) and Ge(111) surface formation energies were calculated using density functional theory for various biaxial strain states ranging from -0.04 to 0.04, and for a wide set of e…