activity
20172021
most citedControlled manipulation of oxygen vacancies using nanoscale flexoelectricity

127 citations · 399 across the 6 of their papers we have counts for

collaborators
Showing cond-mat.mtrl-sciShow all

5 papers · 1 filter

cond-mat.mtrl-sci202124 cited

Growth and atomically resolved polarization mapping of ferroelectric thin film

Jihwan Jeong, Junsik Mun, Saikat Das +5

Aurivillius ferroelectric (BWO) encompasses a broad range of functionalities, including robust fatigue-free ferroelectricity, high photocatalytic activity, and ionic con…

cond-mat.mtrl-sci202119 cited

Deterministic influence of substrate-induced oxygen vacancy diffusion on thin film growth

Saikat Das, Tadakatsu Ohkubo, Shinya Kasai +1

In oxide epitaxy, the growth temperature and background oxygen partial pressure are considered as the most critical factors that control the phase stability of an oxide thin film.…

cond-mat.mtrl-sci2019107 cited

Enhanced flexoelectricity at reduced dimensions revealed by mechanically tunable quantum tunnelling

Saikat Das, Bo Wang, Tula R. Paudel +5

Flexoelectricity is a universal electromechanical coupling effect whereby all dielectric materials polarize in response to strain gradients. In particular, nanoscale flexoelectrici…

cond-mat.mtrl-sci20178 cited

Electronic Reconstruction Enhanced Tunneling Conductance at Terrace Edges of Ultrathin Oxide Films

Lingfei Wang, Rokyeon Kim, Yoonkoo Kim +10

Quantum mechanical tunneling of electrons across ultrathin insulating oxide barriers has been studied extensively for decades due to its great potential in electronic device applic…

cond-mat.mtrl-sci2017114 cited

Overcoming the Fundamental Barrier Thickness Limits of Ferroelectric Tunnel Junctions through BaTiO3/SrTiO3 Composite Barriers

Lingfei Wang, Myung Rae Cho, Yeong Jae Shin +5

Ferroelectric tunnel junctions (FTJs) have attracted increasing research interest as a promising candidate for non-volatile memories. Recently, significant enhancements of tunnelin…