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20122024
most citedSub-nanosecond spin-torque switching of perpendicular magnetic tunnel junction nanopillars at cryogenic temperatures

44 citations · 177 across the 12 of their papers we have counts for

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physics.app-ph2023★ 1 cited

Reduced sensitivity to process, voltage and temperature variations in activated perpendicular magnetic tunnel junctions based stochastic devices

Md Golam Morshed, Laura Rehm, Ankit Shukla +5

True random number generators (TRNGs) are fundamental building blocks for many applications, such as cryptography, Monte Carlo simulations, neuromorphic computing, and probabilisti…

physics.app-ph2023★ 15 cited

A True Random Number Generator for Probabilistic Computing using Stochastic Magnetic Actuated Random Transducer Devices

Ankit Shukla, Laura Heller, Md Golam Morshed +4

Magnetic tunnel junctions (MTJs), which are the fundamental building blocks of spintronic devices, have been used to build true random number generators (TRNGs) with different trad…

physics.app-ph2022★ 37 cited

Stochastic magnetic actuated random transducer devices based on perpendicular magnetic tunnel junctions

Laura Rehm, Corrado Carlo Maria Capriata, Misra Shashank +4

True random number generators are of great interest in many computing applications such as cryptography, neuromorphic systems and Monte Carlo simulations. Here we investigate perpe…

physics.app-ph2020★ 17 cited

Thermal effects in spin torque switching of perpendicular magnetic tunnel junctions at cryogenic temperatures

Laura Rehm, Georg Wolf, Bartek Kardasz +4

Temperature plays an important role in spin torque switching of magnetic tunnel junctions causing magnetization fluctuations that decrease the switching voltage but also introduce…

physics.app-ph2019★ 44 cited

Sub-nanosecond spin-torque switching of perpendicular magnetic tunnel junction nanopillars at cryogenic temperatures

Laura Rehm, Georg Wolf, Bartek Kardasz +2

Spin-transfer magnetic random access memory is of significant interest for cryogenic applications where a persistent, fast, low-energy consumption and high device density is needed…

physics.app-ph2019★ 11 cited

Sub-nanosecond switching in a cryogenic spin-torque spin-valve memory element with a dilute permalloy free layer

Laura Rehm, Volker Sluka, Graham E. Rowlands +3

We present a study of the pulsed current switching characteristics of spin-valve nanopillars with in-plane magnetized dilute permalloy and undiluted permalloy free layers in the ba…