12 citations · 19 across the 3 of their papers we have counts for
3 papers
Sub-40mV Sigma-VTH IGZO nFETs in 300mm Fab
Jerome Mitard, Luka Kljucar, Nouredine Rassoul +19
Back and double gate IGZO nFETs have been demonstrated down to 120nm and 70nm respectively leveraging 300mm fab processing. While the passivation of oxygen vacancies in IGZO is cha…
Comprehensive Modeling of Graphene Resistivity
Antonino Contino, Ivan Ciofi, Xiangyu Wu +5
Since the first graphene layer was fabricated in the early 2000's, graphene properties have been studied extensively both experimentally and theoretically. However, when comparing…
Fabrication of magnetic tunnel junctions connected through a continuous free layer to enable spin logic devices
Danny Wan, Mauricio Manfrini, Adrien Vaysset +16
Magnetic tunnel junctions (MTJs) interconnected via a continuous ferromagnetic free layer were fabricated for Spin Torque Majority Gate (STMG) logic. The MTJs are biased independen…