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Stateful characterization of resistive switching TiO2 with electron beam induced currents
Brian D. Hoskins, Gina C. Adam, Evgheni Strelcov +4
Metal oxide resistive switches are increasingly important as possible artificial synapses in next generation neuromorphic networks. Nevertheless, there is still no codified set of…
Phenomenological Modeling of Memristive Devices
Farnood Merrikh-Bayat, Brian Hoskins, Dmitri B. Strukov
We present a computationally inexpensive yet accurate phenomenological model of memristive behavior in titanium dioxide devices by fitting experimental data. By design, the model p…
Ionically-mediated electromechanical hysteresis in transition metal oxides
Yunseok Kim, Anna N. Morozovska, Amit Kumar +5
Electromechanical activity, remanent polarization states, and hysteresis loops in paraelectric TiO2 and SrTiO3 are observed. The coupling between the ionic dynamics and incipient f…
High-Precision Tuning of State for Memristive Devices by Adaptable Variation-Tolerant Algorithm
Fabien Alibart, Ligang Gao, Brian Hoskins +1
Using memristive properties common for the titanium dioxide thin film devices, we designed a simple write algorithm to tune device conductance at a specific bias point to 1% relati…