activity
20172024
most citedDesign of Polar Codes with Single and Multi-Carrier Modulation on Impulsive Noise Channels using Density Evolution

2 citations · 3 across the 7 of their papers we have counts for

collaborators

9 papers

cs.IT2024

Quantization Design for Resistive Memories With Multiple Reads

Zhen Mei, Kui Cai, Long Shi +1

Due to the crossbar array architecture, the sneak-path problem severely degrades the data integrity in the resistive random access memory (ReRAM). In this letter, we investigate th…

cs.IT20201 cited

DNN-aided Read-voltage Threshold Optimization for MLC Flash Memory with Finite Block Length

Cheng Wang, Kang Wei, Lingjun Kong +4

The error correcting performance of multi-level-cell (MLC) NAND flash memory is closely related to the block length of error correcting codes (ECCs) and log-likelihood-ratios (LLRs…

cs.IT2019

Deep Learning-Aided Dynamic Read Thresholds Design For Multi-Level-Cell Flash Memories

Zhen Mei, Kui Cai, Xuan He

The practical NAND flash memory suffers from various non-stationary noises that are difficult to be predicted. Furthermore, the data retention noise induced channel offset is unkno…

cs.IT2019

Proceedings of the 11th Asia-Europe Workshop on Concepts in Information Theory

A. J. Han Vinck, Kees A. Schouhamer Immink, Tadashi Wadayama +24

This year, 2019 we celebrate 30 years of our friendship between Asian and European scientists at the AEW11 in Rotterdam, the Netherlands. Many of the 1989 participants are also pre…

cs.IT2019

Design of Protograph Codes for Additive White Symmetric Alpha-Stable Noise Channels

Xingwei Zhong, Kui Cai, Pingping Chen +1

The protograph low-density parity-check (LDPC) codes possess many attractive properties, such as the low encoding/decoding complexity and better error floor performance, and hence…

cs.IT2019

Neural Network-Based Dynamic Threshold Detection for Non-Volatile Memories

Zhen Mei, Kui Cai, Xingwei Zhong

The memory physics induced unknown offset of the channel is a critical and difficult issue to be tackled for many non-volatile memories (NVMs). In this paper, we first propose nove…