activity
20132020
most citedEffect of surface ionic screening on polarization reversal scenario in ferroelectric thin films: crossover from ferroionic to antiferroionic states

38 citations · 106 across the 12 of their papers we have counts for

collaborators

13 papers

cond-mat.mes-hall2020★ 1 cited

Fundamental constraints for the length of the MOSFET conduction channel based on the realistic form of the potential barrier

Maksym V. Strikha, Anatolii I. Kurchak, Anna N. Morozovska

The work estimates the minimum channel length of the MOSFET transistor, which is the bacis device of modern electronics. Taking into account the real shape of potential barrier in…

cond-mat.mtrl-sci2019★ 1 cited

Gate Voltage Control of Transition Metal Dichalcogenide Monolayers Quantum Yield

Maksym V. Strikha, Anatolii I. Kurchak, Anna N. Morozovska

Two-dimensional transition metal dichalcogenide (2D-TMD) monolayers, which reveal remarkable semiconductor properties, are the subject of active experimental research.Recently it h…

cond-mat.mtrl-sci2019★ 7 cited

Magnetic dielectric- graphene- ferroelectric system as a promising non-volatile device for modern spintronics

Anatolii I. Kurchak, Anna N. Morozovska, Maksym V. Strikha

The conductivity of the system magnetic dielectric (EuO) - graphene channel - ferroelectric substrate was considered. The magnetic dielectric locally transforms the band spectrum o…

physics.app-ph2018

Temperature behavior of graphene conductance induced by piezoelectric effect in ferroelectric substrate

Anna N. Morozovska, Anatolii I. Kurchak, Zhanna G. Zemska +1

Graphene on ferroelectric structures can be promising candidates for advanced field effect transistors, modulators and electrical transducers, providing that research of their elec…

cond-mat.mtrl-sci2018★ 9 cited

Impact of the domain structure in ferroelectric substrate on graphene conductance (authors' review)

Maksym V. Strikha, Anatolii I. Kurchak, Anna N. Morozovska

Review is devoted to the recent theoretical studies of the impact of domain structure of ferroelectric substrate on graphene conductance. An analytical description of the hysteresi…

cond-mat.mes-hall2018★ 7 cited

Integer Quantum Hall Effect in Graphene Channel with p-n Junction at Domain Wall in Ferroelectric Substrate

Maksym V. Strikha, Anatolii I. Kurchak, Anna N. Morozovska

We revealed that 180 degree ferroelectrics domain walls (FDWs) in a ferroelectric substrate, which induce p-n junctions in a graphene channel, lead to the nontrivial temperature an…