activity
20042009
most citedEffect of initial spin polarization on spin dephasing and electron g factor in a high-mobility two-dimensional electron system

88 citations · 187 across the 6 of their papers we have counts for

collaborators

6 papers

cond-mat.mes-hall2009★ 45 cited

Engineering ultralong spin coherence in two-dimensional hole systems at low temperatures

T. Korn, M. Kugler, M. Griesbeck +7

For the realisation of scalable solid-state quantum-bit systems, spins in semiconductor quantum dots are promising candidates. A key requirement for quantum logic operations is a s…

cond-mat.mes-hall2009

Gate control of low-temperature spin dynamics in two-dimensional hole systems

M. Kugler, T. Andlauer, T. Korn +9

We have investigated spin and carrier dynamics of resident holes in high-mobility two-dimensional hole systems in GaAs/AlGaAs single quantum wells at temperatures d…

cond-mat.other2008★ 11 cited

Spin dynamics in high-mobility two-dimensional electron systems

Tobias Korn, Dominik Stich, Robert Schulz +3

Understanding the spin dynamics in semiconductor heterostructures is highly important for future semiconductor spintronic devices. In high-mobility two-dimensional electron systems…

cond-mat.mtrl-sci2007★ 43 cited

Dependence of spin dephasing on initial spin polarization in a high-mobility two-dimensional electron system

D. Stich, J. Zhou, T. Korn +5

We have studied the spin dynamics of a high-mobility two-dimensional electron system in a GaAs/Al_{0.3}Ga_{0.7}As single quantum well by time-resolved Faraday rotation and time-res…

cond-mat.mtrl-sci2006★ 88 cited

Effect of initial spin polarization on spin dephasing and electron g factor in a high-mobility two-dimensional electron system

D. Stich, J. Zhou, T. Korn +4

We have investigated the spin dynamics of a high-mobility two-dimensional electron system (2DES) in a GaAs--AlGaAs single quantum well by time-resolved Faraday rota…

cond-mat.mes-hall2004

A new method to epitaxially grow long-range ordered self-assembled InAs quantum dots on (110) GaAs

J. Bauer, D. Schuh, E. Uccelli +5

We report on a new approach for positioning of self-assembled InAs quantum dots on (110) GaAs with nanometer precision. By combining self-assembly of quantum dots with molecular be…