activity
20172026
most citedFrequency Response of Metal-Oxide Memristors

14 citations · 31 across the 17 of their papers we have counts for

collaborators

19 papers

cond-mat.mtrl-sci2026

A relational fabrication-to-modeling database for memristor devices

Lai Gan, Guoyang Huang, Deepika Yadav +3

Resistive random access memory (RRAM) devices, also known as memristors, are highly dependent on fabrication, location on the wafer, and measurement protocols. However, openly avai…

physics.optics2026

Parallel Spatial Photonic Programming of Optoelectronic IGZO RRAM with a compact LED Array

Andrew Adair, Joshua Robertson, Andreas Tsiamis +6

Optoelectronic resistive random-access memory elements (ORRAM) are critical emerging devices that leverage photonic technologies to bring the advantages of optical programming to t…

cs.CV2026

Non-frontal face recognition using GANs and memristor-based classifiers

Semih Vazgecen, Cristian Sestito, Spyros Stathopoulos +1

Face recognition systems have advanced significantly through deep learning techniques, delivering high performance and robustness in complex scenarios. However, these approaches in…

cond-mat.mtrl-sci2025

A Rapid-prototyping CMOS-RRAM Integration Strategy

Andreas Tsiamis, Spyros Stathopoulos, Themis Prodromakis

Moore's law has long served the semiconductor industry as the driving force for producing ever-advancing electronics technologies. However, given the economic implications and tech…

eess.AS2025

A Multi-Channel Auditory Signal Encoder with Adaptive Resolution Using Volatile Memristors

Dongxu Guo, Deepika Yadav, Patrick Foster +4

We demonstrate and experimentally validate an end-to-end hybrid CMOS-memristor auditory encoder that realises adaptive-threshold, asynchronous delta-modulation (ADM)-based spike en…

cond-mat.mtrl-sci2025

Multibit Ferroelectric Memcapacitor for Non-volatile Analogue Memory and Reconfigurable Filtering

Deepika Yadav, Spyros Stathopoulos, Patrick Foster +4

Tuneable capacitors are vital for adaptive and reconfigurable electronics, yet existing approaches require continuous bias or mechanical actuation. Here we demonstrate a voltage-pr…

cs.NE2022★ 1 cited

Text Classification in Memristor-based Spiking Neural Networks

Jinqi Huang, Alex Serb, Spyros Stathopoulos +1

Memristors, emerging non-volatile memory devices, have shown promising potential in neuromorphic hardware designs, especially in spiking neural network (SNN) hardware implementatio…

cs.NE2022

A tool for emulating neuromorphic architectures with memristive models and devices

Jinqi Huang, Spyros Stathopoulos, Alex Serb +1

Memristors have shown promising features for enhancing neuromorphic computing concepts and AI hardware accelerators. In this paper, we present a user-friendly software infrastructu…

cs.ET2022

A CMOS-based Characterisation Platform for Emerging RRAM Technologies

Andrea Mifsud, Jiawei Shen, Peilong Feng +11

Mass characterisation of emerging memory devices is an essential step in modelling their behaviour for integration within a standard design flow for existing integrated circuit des…

physics.app-ph2022

Selectively biased tri-terminal vertically-integrated memristor configuration

Vasileios Manouras, Spyros Stathopoulos, Alex Serb +1

Memristors, when utilized as electronic components in circuits, can offer opportunities for the implementation of novel reconfigurable electronics. While they have been used in lar…

cs.ET2022★ 12 cited

NeuroPack: An Algorithm-level Python-based Simulator for Memristor-empowered Neuro-inspired Computing

Jinqi Huang, Spyros Stathopoulos, Alex Serb +1

Emerging two terminal nanoscale memory devices, known as memristors, have over the past decade demonstrated great potential for implementing energy efficient neuro-inspired computi…

eess.SP2022

An FPGA-based System for Generalised Electron Devices Testing

Patrick Foster, Jinqi Huang, Alex Serb +3

Electronic systems are becoming more and more ubiquitous as our world digitises. Simultaneously, even basic components are experiencing a wave of improvements with new transistors,…

cs.ET2021★ 2 cited

Emulating homoeostatic effects with metal-oxide memristors T-dependence

Thomas Abbey, Alexantrou Serb, Spyros Stathopoulos +2

Memristor technologies have been rapidly maturing for the past decade to support the needs of emerging memory, artificial synapses, logic gates and bio-signal processing applicatio…

q-bio.NC2021

Palimpsest Memories Stored in Memristive Synapses

Christos Giotis, Alexander Serb, Vasileios Manouras +2

Biological synapses store multiple memories on top of each other in a palimpsest fashion and at different timescales. Palimpsest consolidation is facilitated by the interaction of…

physics.app-ph2020★ 14 cited

Frequency Response of Metal-Oxide Memristors

Vasileios Manouras, Spyros Stathopoulos, Suresh Kumar Garlapati +2

Memristors have been at the forefront of nanoelectronics research for the last decade, offering a valuable component to reconfigurable computing. Their attributes have been studied…

cs.ET2020★ 2 cited

Hybrid CMOS/Memristor Circuit Design Methodology

Sachin Maheshwari, Spyros Stathopoulos, Jiaqi Wang +8

RRAM technology has experienced explosive growth in the last decade, with multiple device structures being developed for a wide range of applications. However, transitioning the te…

physics.app-ph2018

A technology agnostic RRAM characterisation methodology protocol

Spyros Stathopoulos, Loukas Michalas, Ali Khiat +2

The emergence of memristor technologies brings new prospects for modern electronics via enabling novel in-memory computing solutions and affordable and scalable reconfigurable hard…

physics.app-ph2017

Metal - TiO2 contacts: An electrical characterization study

L. Michalas, A. Khiat, S. Stathopoulos +1

The electrical properties of thin TiO2 films have recently been extensively exploited towards enabling a variety for metal-oxide electron devices: unipolar/bipolar semiconductor de…

cond-mat.mes-hall2017

Multibit memory operation of metal-oxide bi-layer memristors

Spyros Stathopoulos, Ali Khiat, Maria Trapatseli +4

In this work, we evaluate a multitude of metal-oxide bi-layers and demonstrate the benefits from increased memory stability via multibit memory operation. We introduce a programmin…