2 papers
cond-mat.mtrl-sci2025
Ultra-clean interface between high k dielectric and 2D MoS2
Han Yan, Yan Wang, Yang Li +8
Atomically thin transition metal dichalcogenides (TMDs) are promising candidates for next-generation transistor channels due to their superior scaling properties. However, the inte…
cond-mat.mtrl-sci2024
Orientation-dependent surface radiation damage in -Ga2O3 explored by multiscale atomic simulations
Taiqiao Liu, Zeyuan Li, Junlei Zhao +7
Ultrawide bandgap semiconductor -Ga2O3 holds extensive potential for applications in high-radiation environments. One of the primary challenges in its practical application is…