1 citations · 1 across the 2 of their papers we have counts for
3 papers
Improved Thin Film Quality and Photoluminescence of N-Doped Epitaxial Germanium-on-Silicon using MOCVD
Guangnan Zhou, Alejandra V. Cuervo Covian, Kwang Hong Lee +4
Ge-on-Si structures in-situ doped with phosphorus or arsenic via metal organic chemical vapor deposition (MOCVD) were investigated. Surface roughness, strain, threading dislocation…
Impacts of Doping on Epitaxial Germanium Thin Film Quality and Si-Ge Interdiffusion
Guangnan Zhou, Kwang Hong Lee, Dalaver H. Anjum +5
Ge-on-Si structures with three different dopants (P, As and B) and those without intentional doping were grown and annealed. Several different materials characterization methods ha…
On the Origins of Near-Surface Stresses in Silicon around Cu-filled and CNT-filled Through Silicon Vias
Ye Zhu, Kaushik Ghosh, Hong Yu Li +3
Micro-Raman spectroscopy was employed to study the near-surface stress distributions and origins in Si around through silicon vias (TSVs) at both room temperature and elevated temp…