1 citations · 1 across the 2 of their papers we have counts for
3 papers
Improved Thin Film Quality and Photoluminescence of N-Doped Epitaxial Germanium-on-Silicon using MOCVD
Guangnan Zhou, Alejandra V. Cuervo Covian, Kwang Hong Lee +4
Ge-on-Si structures in-situ doped with phosphorus or arsenic via metal organic chemical vapor deposition (MOCVD) were investigated. Surface roughness, strain, threading dislocation…
Impacts of Doping on Epitaxial Germanium Thin Film Quality and Si-Ge Interdiffusion
Guangnan Zhou, Kwang Hong Lee, Dalaver H. Anjum +5
Ge-on-Si structures with three different dopants (P, As and B) and those without intentional doping were grown and annealed. Several different materials characterization methods ha…
Low-threshold optically pumped lasing in highly strained Ge nanowires
Shuyu Bao, Daeik Kim, Chibuzo Onwukaeme +11
The integration of efficient, miniaturized group IV lasers into CMOS architecture holds the key to the realization of fully functional photonic-integrated circuits. Despite several…