activity
20122021
most citedPhase diagram and critical behavior of the random ferromagnet

60 citations · 192 across the 6 of their papers we have counts for

collaborators

6 papers

cond-mat.mtrl-sci2021★ 18 cited

Improved-Sensitivity Integral SQUID Magnetometry of (Ga,Mn)N Thin Films in Proximity to Mg-doped GaN

Katarzyna Gas, Gerd Kunert, Piotr Dluzewski +3

Nominally 45 nm GaN:Mg/ 5 nm (Ga,Mn)N / 45 nm GaN:Mg trilayers structures prepared by molecular beam epitaxy on GaN-buffered Al2O3 substrates are investigated to verify whether the…

cond-mat.mtrl-sci2018★ 27 cited

Impact of substrate temperature on magnetic properties of plasma-assisted molecular beam epitaxy grown (Ga,Mn)N

Katarzyna Gas, Jaroslaw Z. Domagala, Rafal Jakiela +12

A range of high quality Ga1-xMnxN layers have been grown by molecular beam epitaxy with manganese concentration 0.2 < x < 10%, having the x value tuned by changing the growth tempe…

cond-mat.mtrl-sci2017★ 30 cited

Fermi level and bands offsets determination in insulating (Ga,Mn)N/GaN structures

L. Janicki, G. Kunert, M. Sawicki +5

The Fermi level position in (Ga,Mn)N has been determined from the period-analysis of GaN-related Franz-Keldysh oscillation obtained by contactless electroreflectance in a series of…

cond-mat.mtrl-sci2014★ 6 cited

Determination of the Fermi Level Position in Dilute Magnetic GaMnN Films

Stefan Barthel, Gerd Kunert, Mariuca Gartner +6

We report on a combined theoretical and experimental determination of the Fermi level position in wurtzite GaMnN films with and as grown by molecular…

cond-mat.dis-nn2013★ 60 cited

Phase diagram and critical behavior of the random ferromagnet

S. Stefanowicz, G. Kunert, C. Simserides +11

Molecular beam epitaxy has been employed to obtain Ga1-xMnxN films with x up to 10% and Curie temperatures T_C up to 13 K. The magnitudes of T_C and their dependence on x, T_C(x) ~…

cond-mat.mtrl-sci2012★ 51 cited

GaMnN epitaxial films with high magnetization

Gerd Kunert, Sylwia Dobkowska, Tian Li +10

We report on the fabrication of pseudomorphic wurtzite GaMnN grown on GaN with Mn concentrations up to 10% using molecular beam epitaxy. According to Rutherford backscattering the…