J. Schwandt

activity

20112026

most citedCombined measurements of Higgs boson couplings in proton-proton collisions at

s =

13 TeV

442 citations · 5.6k across the 120 of their papers we have counts for

collaborators

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3 papers · 1 filter

cond-mat.mtrl-sci2025★ 1 cited

On the nature and charge state of the X-Defect, a radiation-induced Silicon defect with field-enhanced charge carrier emission

Niels Sorgenfrei, Yana Gurimskaya, Anja Himmerlich +4

The elusive X-Defect, a defect found in low-resistivity $p$ -type Silicon after irradiation, observed as a low-temperature shoulder of the $\mathrm{B}_\mathrm{i}\mathrm{O}_\mathrm{i…

cond-mat.mtrl-sci2024

Is the gain-voltage dependence of SiPMs linear?

M. Antonello, L. Brinkmann, E. Garutti +2

The gain-voltage dependence for SiPMs from V. Chmill et al., Study of the breakdown voltage of SiPMs, is reanalyzed and a non-linearity at the sub-percent level is observed. Simula…

cond-mat.mtrl-sci2022★ 2 cited

Study of the V $_{2}^{0}$ state in neutron-irradiated silicon using photon-absorption measurements

Eckhart Fretwurst, Robert Klanner, Joern Schwandt +1

Pieces of $n$ -type silicon with 3.5 k $Ω \cdot$ cm resistivity have been irradiated by reactor neutrons to fluences of (1, 5 and 10) $\times 1 0^{16}$ cm $^{- 2}$ . Using light-transmiss…

On the nature and charge state of the X-Defect, a radiation-induced Silicon defect with field-enhanced charge carrier emission

Is the gain-voltage dependence of SiPMs linear?

Study of the V20​ state in neutron-irradiated silicon using photon-absorption measurements

Study of the V $_{2}^{0}$ state in neutron-irradiated silicon using photon-absorption measurements