3 citations · 13 across the 11 of their papers we have counts for
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Broadband frequency comb generation in aluminum nitride-on-sapphire microresonators
Xianwen Liu, Changzheng Sun, Bing Xiong +10
Development of chip-scale optical frequency comb with the coverage from ultra-violet (UV) to mid-infrared (MIR) wavelength is of great significance. To expand the comb spectrum int…
InGaN/GaN Multi-Quantum-Well and Light-Emitting Diode Based on V-pit-Shaped GaN Grown on Patterned Sapphire Substrate
Lai Wang, Xiao Meng, Di Yang +8
V-pit-defects in GaN-based light-emitting diodes induced by dislocations are considered beneficial to electroluminescence because they relax the strain in InGaN quantum wells and a…
"WM"-Shaped Growth of GaN on Patterned Sapphire Substrates
Lai Wang, Xiao Meng, Di Yang +7
In metal organic vapor phase epitaxy of GaN, the growth mode is sensitive to reactor temperature. In this study, V-pit-shaped GaN has been grown on normal c-plane cone-patterned sa…
Continuous-wave Raman Lasing in Aluminum Nitride Microresonators
Xianwen Liu, Changzheng Sun, Bing Xiong +10
We report the first investigation on continuous-wave Raman lasing in high-quality-factor aluminum nitride (AlN) microring resonators. Although wurtzite AlN is known to exhibit six…