activity
20162025
most citedA PMT-like high gain avalanche photodiode based on GaN/AlN periodical stacked structure

50 citations · 73 across the 17 of their papers we have counts for

collaborators
Showing cond-mat.mes-hallShow all

1 paper · 1 filter

cond-mat.mes-hall2016

InGaN/GaN Multi-Quantum-Well and Light-Emitting Diode Based on V-pit-Shaped GaN Grown on Patterned Sapphire Substrate

Lai Wang, Xiao Meng, Di Yang +8

V-pit-defects in GaN-based light-emitting diodes induced by dislocations are considered beneficial to electroluminescence because they relax the strain in InGaN quantum wells and a…