Photogalvanic effects due to quantum interference in optical transitions demonstrated by terahertz radiation absorption in Si-MOSFETs

P. Olbrich, S. A. Tarasenko, C. Reitmaier +4

We report on the observation of the circular (helicity-dependent) and linear photogalvanic effects in Si-MOSFETs with inversion channels. The developed microscopic theory demonstra…