36 citations · 98 across the 10 of their papers we have counts for
10 papers
Terahertz spin-current transparency through rough interfaces
Jiří Jechumtál, Jakub Zázvorka, Ondřej Novák +8
Spin transport across interfaces is critical for spintronic devices, yet remains difficult to probe on ultrafast timescales. We use terahertz emission spectroscopy on Co|Pt heteros…
Unveiling Davydov-Split Excitons in a Template-Engineered Molecular-Graphene Heterostructure
Jan Kunc, Bohdan Morzhuk, Veronika Stará +6
The realization of high-fidelity organic-inorganic quantum emulators is frequently hindered by the interfacial imperfections introduced during device fabrication. Here, we demonstr…
Investigation of internal electric fields in graphene/6H-SiC under illumination by Pockels effect
Vaclav Dedic, Jakub Sanitrak, Tomas Fridrisek +4
In this paper, we introduce a method for mapping profiles of internal electric fields in birefringent crystals based on the electro-optic Pockels effect and measuring phase differe…
Plasmon-plasmon interaction and the role of buffer in epitaxial graphene micro-flakes
Mykhailo Shestopalov, Václav Dědič, Martin Rejhon +7
We investigate the origin of the translational symmetry breaking in epitaxially grown single-layer graphene. Despite the surface morphology of homogeneous graphene films influenced…
Influence of deep levels on the electrical transport properties of CdZnTeSe detectors
M Rejhon, J Franc, V Dědič +4
We investigated the influence of deep levels on the electrical transport properties of CdZnTeSe radiation detectors by comparing experimental data with numerical simulations based…
Investigation of deep levels in CdZnTeSe crystal and their effect on the internal electric field of CdZnTeSe gamma-ray detector
M Rejhon, V Dědič, L Beran +3
We present a study of deep levels in CdZnTeSe radiation-detection materials. The approach relies on electrical methods that combine time and temperature evolution of the electric f…
Intercalation of hydrogen in the SiC/epitaxial graphene interface
Jan Kunc, Martin Rejhon, Pavel Hlídek
We have measured optical absorption in mid-infrared spectral range on hydrogen intercalated epitaxial graphene grown on silicon face of SiC. We have used attenuated total reflectio…
The electroluminescent properties based on bias polarity of the epitaxial graphene/aluminium SiC junction
M. Rejhon, J. Franc, V. Dědič +2
We investigated the electroluminescent properties of the epitaxial graphene/SiC junction. The temperature and current dependence of electroluminescence from the epitaxial graphene/…
Dual-wavelength Photo-Hall effect spectroscopy of deep levels in high resistive CdZnTe with negative differential photoconductivity
A. Musiienko, R. Grill, P. Moravec +6
Photo-Hall effect spectroscopy was used in the study of deep levels in high resistive CdZnTe. The monochromator excitation in the photon energy range 0.65-1.77 eV was complemented…
Effect of residual gas composition on epitaxial graphene growth on SiC
Jan Kunc, Martin Rejhon, Eduard Belas +3
In recent years, graphene growth optimization has been one of the key routes towards large-scale, high-quality graphene production. We have measured in-situ residual gas content du…